TY  - JOUR
AU  - Podgursky, E. G.
AU  - Costina, I.
AU  - Franchy, R.
TI  - Co on thin Al2O3 films grown on Ni3Al(100)
JO  - Surface science
VL  - 529
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-3298
SP  - 419
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The growth of Co on thin Al2O3 layers on Ni3Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al2O3 layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Angstrom of Co, a complete screening of the dipoles of the Al2O3 layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place. (C) 2003 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000182192500022
DO  - DOI:10.1016/S0039-6028(03)00081-5
UR  - https://juser.fz-juelich.de/record/3298
ER  -