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@ARTICLE{Podgursky:3298,
      author       = {Podgursky, E. G. and Costina, I. and Franchy, R.},
      title        = {{C}o on thin {A}l2{O}3 films grown on {N}i3{A}l(100)},
      journal      = {Surface science},
      volume       = {529},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-3298},
      pages        = {419},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The growth of Co on thin Al2O3 layers on Ni3Al(1 0 0) was
                      investigated by Auger electron spectroscopy, high resolution
                      electron energy loss spectroscopy (EELS), and scanning
                      tunneling microscopy. At 300 K, Co grows in
                      three-dimensional clusters on top of the Al2O3 layer. A
                      defect structure of the alumina layer plays a crucial role
                      during the early stage of Co growth. After deposition of 10
                      Angstrom of Co, a complete screening of the dipoles of the
                      Al2O3 layer due to the Co film is found in the EELS
                      measurements. Annealing the Co film reveals a process of
                      coalescence of Co clusters and, above 700 K, diffusion of
                      the Co atoms through the oxide film into the substrate takes
                      place. (C) 2003 Elsevier Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000182192500022},
      doi          = {10.1016/S0039-6028(03)00081-5},
      url          = {https://juser.fz-juelich.de/record/3298},
}