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@ARTICLE{Dittmann:33148,
      author       = {Dittmann, R. and Plonka, R. and Vasco, E. and Pertsev, N.
                      A. and He, J. Q. and Jia, C. L. and Hoffmann-Eifert, S. and
                      Waser, R.},
      title        = {{S}harp ferroelectric phase transition in strained
                      epitaxial {SRO}-{BST}-{SRO} capacitors},
      journal      = {Applied physics letters},
      volume       = {83},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-33148},
      pages        = {5011},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Single-crystalline all-perovskite
                      SrRuO3/Ba0.7Sr0.3TiO3/SrRuO3 thin-film capacitors
                      epitaxially grown on SrTiO3 exhibit a sharp
                      paraelectric-to-ferroelectric phase transition at 350 K with
                      a maximum permittivity of about 6660. This value is
                      comparable to that of bulk ceramics and exceeds by several
                      times the highest values reported for Ba0.7Sr0.3TiO3 thin
                      film capacitors. The observed thickness dependence of the
                      dielectric response is analyzed with the aid of a
                      thermodynamic theory. It is shown that a weak decrease of
                      the permittivity with the Ba0.7Sr0.3TiO3 thickness
                      decreasing from 200 to 10 nm can be explained solely by the
                      thickness-dependent strain relaxation in epitaxial films
                      without assuming the presence of low-permittivity layers at
                      the film/electrode interfaces. (C) 2003 American Institute
                      of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM / IFF-IMF},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35 / I:(DE-Juel1)VDB37},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000187181400039},
      doi          = {10.1063/1.1633027},
      url          = {https://juser.fz-juelich.de/record/33148},
}