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000033616 0247_ $$2DOI$$a10.1209/epl/i2003-00191-8
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000033616 084__ $$2WoS$$aPhysics, Multidisciplinary
000033616 1001_ $$0P:(DE-Juel1)VDB2264$$aSato, K.$$b0$$uFZJ
000033616 245__ $$aCurie temperatures of III-V magnetic semiconductors calculated from first-principles
000033616 260__ $$aLes Ulis$$bEDP Sciences$$c2003
000033616 300__ $$a403 - 408
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000033616 440_0 $$01996$$aEurophysics Letters$$v61$$x0295-5075
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000033616 520__ $$aCurie temperatures of the diluted magnetic semiconductors (Ga, Mn) As, (Ga, Mn) N, (Ga, Cr) As and (Ga, Cr) N are evaluated from first principles. The electronic structure is calculated in the local spin density approximation by using the Korringa-Kohn-Rostoker method combined with the coherent potential approximation to describe the substitutional and spin disorder. From the total energy differences between the ferromagnetic state and the spin-glass state, realistic estimations of Curie temperatures are achieved by using a mapping on the Heisenberg model in the mean-field approximation. Effects of additional carrier doping treatments are also investigated. Very large Curie temperatures are obtained, lying above room temperature for ( Ga, Mn) N, ( Ga, Cr) As and ( Ga, Cr) N. Upon hole doping the Curie temperature of (Ga, Mn) N further increases, while (Ga, Mn) As shows a plateau behavior.
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000033616 7001_ $$0P:(DE-Juel1)130612$$aDederichs, P. H.$$b1$$uFZJ
000033616 7001_ $$0P:(DE-HGF)0$$aKatayama-Yoshida, H.$$b2
000033616 773__ $$0PERI:(DE-600)1465366-7$$a10.1209/epl/i2003-00191-8$$gVol. 61, p. 403 - 408$$p403 - 408$$q61<403 - 408$$tepl$$v61$$x0295-5075$$y2003
000033616 8567_ $$uhttp://dx.doi.org/10.1209/epl/i2003-00191-8
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000033616 9201_ $$0I:(DE-Juel1)VDB32$$d31.12.2006$$gIFF$$kIFF-TH-III$$lTheorie III$$x0
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