000003384 001__ 3384
000003384 005__ 20180208223615.0
000003384 0247_ $$2DOI$$a10.1080/00150190802438025
000003384 0247_ $$2WOS$$aWOS:000261665200017
000003384 037__ $$aPreJuSER-3384
000003384 041__ $$aeng
000003384 082__ $$a530
000003384 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000003384 084__ $$2WoS$$aPhysics, Condensed Matter
000003384 1001_ $$0P:(DE-HGF)0$$aRusek, K.$$b0
000003384 245__ $$aNon-linear properties of BaTiO3 above Tc
000003384 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2008
000003384 300__ $$a165
000003384 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000003384 3367_ $$2DataCite$$aOutput Types/Journal article
000003384 3367_ $$00$$2EndNote$$aJournal Article
000003384 3367_ $$2BibTeX$$aARTICLE
000003384 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000003384 3367_ $$2DRIVER$$aarticle
000003384 440_0 $$02058$$aFerroelectrics$$v375$$x0015-0193
000003384 500__ $$aRecord converted from VDB: 12.11.2012
000003384 520__ $$aAlthough numerous papers on physical properties of the BaTiO3 crystal can be found in literature, there is a lack of tentative studies of its properties in temperature range close to but above T-C. That is why investigations of temperature dependence of the dielectric properties, electrostrictive strain and thermal expansion have been undertaken. Results obtained point to non-linear behaviour of all these properties even tens degrees above TC. Especially the non-linear thermal expansion, first time measured in detail for BaTiO3 above TC, implies the existence of micro/nano-polar regions whose temperature stability and sizes are responsible for temperature hysteresis above T-C.
000003384 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000003384 588__ $$aDataset connected to Web of Science
000003384 650_7 $$2WoSType$$aJ
000003384 65320 $$2Author$$aElectrostriction
000003384 65320 $$2Author$$athermal expansion
000003384 65320 $$2Author$$apolar regions
000003384 7001_ $$0P:(DE-HGF)0$$aKruczek, J.$$b1
000003384 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b2$$uFZJ
000003384 773__ $$0PERI:(DE-600)2042895-9$$a10.1080/00150190802438025$$gVol. 375, p. 165$$p165$$q375<165$$tFerroelectrics$$v375$$x0015-0193$$y2008
000003384 8567_ $$uhttp://dx.doi.org/10.1080/00150190802438025
000003384 909CO $$ooai:juser.fz-juelich.de:3384$$pVDB
000003384 9131_ $$0G:(DE-Juel1)FUEK412$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000003384 9141_ $$y2008
000003384 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000003384 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000003384 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000003384 970__ $$aVDB:(DE-Juel1)109388
000003384 980__ $$aVDB
000003384 980__ $$aConvertedRecord
000003384 980__ $$ajournal
000003384 980__ $$aI:(DE-Juel1)PGI-7-20110106
000003384 980__ $$aI:(DE-82)080009_20140620
000003384 980__ $$aUNRESTRICTED
000003384 981__ $$aI:(DE-Juel1)PGI-7-20110106
000003384 981__ $$aI:(DE-Juel1)VDB881