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000033962 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000033962 084__ $$2WoS$$aMaterials Science, Coatings & Films
000033962 084__ $$2WoS$$aPhysics, Applied
000033962 084__ $$2WoS$$aPhysics, Condensed Matter
000033962 1001_ $$0P:(DE-Juel1)VDB5913$$aKluth, O.$$b0$$uFZJ
000033962 245__ $$aModified Thornton model for magnetron sputtered zinc oxide: film structure and etching behaviour
000033962 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2003
000033962 300__ $$a80 - 85
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000033962 520__ $$aZnO:Al films were prepared on glass substrates with different sputter techniques from ceramic ZnO:Al2O3 target as well as metallic Zn:Al targets using a wide range of deposition parameters. Independent of the sputter technique, sputter pressure and substrate temperature were found to have a major influence on the electrical and structural properties of the ZnO:Al films. With an increasing deposition pressure, we observed a strong decrease in the carrier mobility and also an increase of the etching rate. The surface morphology obtAlned after etching of RF sputtered ZnO:Al systematically changes from crater-like to hill-like surface appearance with increasing pressure. The correlation of sputter parameters, film growth and structural properties is discussed in terms of a modified Thornton model. (C) 2003 Elsevier Science B.V. All rights reserved.
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000033962 65320 $$2Author$$aetching
000033962 65320 $$2Author$$asputtering
000033962 65320 $$2Author$$asurface morphology
000033962 65320 $$2Author$$azinc oxide
000033962 7001_ $$0P:(DE-Juel1)VDB5938$$aSchöpe, G.$$b1$$uFZJ
000033962 7001_ $$0P:(DE-Juel1)130252$$aHüpkes, J.$$b2$$uFZJ
000033962 7001_ $$0P:(DE-HGF)0$$aAgashe, Ch.$$b3
000033962 7001_ $$0P:(DE-Juel1)VDB2892$$aMüller, J.$$b4$$uFZJ
000033962 7001_ $$0P:(DE-Juel1)VDB5941$$aRech, B.$$b5$$uFZJ
000033962 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/S0040-6090(03)00949-0$$gVol. 442, p. 80 - 85$$p80 - 85$$q442<80 - 85$$tThin solid films$$v442$$x0040-6090$$y2003
000033962 8567_ $$uhttp://dx.doi.org/10.1016/S0040-6090(03)00949-0
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000033962 9141_ $$aNachtrag$$y2003
000033962 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000033962 9201_ $$0I:(DE-Juel1)VDB46$$d31.12.2006$$gIPV$$kIPV$$lInstitut für Photovoltaik$$x0
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