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000035290 0247_ $$2DOI$$a10.1103/PhysRevB.69.193402
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000035290 084__ $$2WoS$$aPhysics, Condensed Matter
000035290 1001_ $$0P:(DE-Juel1)VDB1226$$aPaul, N.$$b0$$uFZJ
000035290 245__ $$aGrowth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant
000035290 260__ $$aCollege Park, Md.$$bAPS$$c2004
000035290 300__ $$a193402
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000035290 520__ $$aWe compare the initial stages of growth of Ge on Si(111) with Bi as a surfactant and without surfactant. At the beginning of growth, three-dimensional islands with a strain relieving dislocation network at their base are formed in both growth systems. These islands can be regarded as seeds of a flat relaxed Ge layer on Si(111). However, such Ge layer forms at later stages of growth only in the growth with Bi surfactant, while the growing Ge layer without surfactant remains rough. What makes the difference and the success of Bi surfactant mediated epitaxy is the lateral growth and coalescence of the seed islands that cover the entire surface within first 15 bilayers of Ge deposition. This happens due to a kinetic limitation of the incorporation of Ge into the growing layer in the presence of surfactant.
000035290 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000035290 7001_ $$0P:(DE-Juel1)VDB32659$$aAsaoka, H.$$b1$$uFZJ
000035290 7001_ $$0P:(DE-Juel1)VDB9864$$aMyslivecek, J.$$b2$$uFZJ
000035290 7001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b3$$uFZJ
000035290 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.69.193402$$bAmerican Physical Society (APS)$$d2004-05-13$$n19$$p193402$$tPhysical Review B$$v69$$x1098-0121$$y2004
000035290 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.69.193402$$gVol. 69, p. 193402$$n19$$p193402$$q69<193402$$tPhysical review / B$$v69$$x1098-0121$$y2004
000035290 8567_ $$uhttp://hdl.handle.net/2128/2155$$uhttp://dx.doi.org/10.1103/PhysRevB.69.193402
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