TY  - JOUR
AU  - Paul, N.
AU  - Asaoka, H.
AU  - Myslivecek, J.
AU  - Voigtländer, B.
TI  - Growth mechanisms in Ge/Si(111) heteroepitaxy with and without Bi as a surfactant
JO  - Physical review / B
VL  - 69
IS  - 19
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-35290
SP  - 193402
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - We compare the initial stages of growth of Ge on Si(111) with Bi as a surfactant and without surfactant. At the beginning of growth, three-dimensional islands with a strain relieving dislocation network at their base are formed in both growth systems. These islands can be regarded as seeds of a flat relaxed Ge layer on Si(111). However, such Ge layer forms at later stages of growth only in the growth with Bi surfactant, while the growing Ge layer without surfactant remains rough. What makes the difference and the success of Bi surfactant mediated epitaxy is the lateral growth and coalescence of the seed islands that cover the entire surface within first 15 bilayers of Ge deposition. This happens due to a kinetic limitation of the incorporation of Ge into the growing layer in the presence of surfactant.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000221961700019
DO  - DOI:10.1103/PhysRevB.69.193402
UR  - https://juser.fz-juelich.de/record/35290
ER  -