000035410 001__ 35410
000035410 005__ 20200423203655.0
000035410 017__ $$aThis version is available at the following Publisher URL: http://jap.aip.org
000035410 0247_ $$2DOI$$a10.1063/1.1759084
000035410 0247_ $$2WOS$$aWOS:000222093300089
000035410 0247_ $$2Handle$$a2128/988
000035410 0247_ $$2Handle$$a2128/990
000035410 037__ $$aPreJuSER-35410
000035410 041__ $$aeng
000035410 082__ $$a530
000035410 084__ $$2WoS$$aPhysics, Applied
000035410 1001_ $$0P:(DE-HGF)0$$aLookman, I. V.$$b0
000035410 245__ $$aThickness independence of true phase transition temperatures in barium strontium titanate films
000035410 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2004
000035410 300__ $$a555 - 562
000035410 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000035410 3367_ $$2DataCite$$aOutput Types/Journal article
000035410 3367_ $$00$$2EndNote$$aJournal Article
000035410 3367_ $$2BibTeX$$aARTICLE
000035410 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000035410 3367_ $$2DRIVER$$aarticle
000035410 440_0 $$03051$$aJournal of Applied Physics$$v96$$x0021-8979
000035410 500__ $$aRecord converted from VDB: 12.11.2012
000035410 520__ $$aThe functional properties of two types of barium strontium titanate (BST) thin film capacitor structures were studied: one set of structures was made using pulsed-laser deposition (PLD) and the other using chemical solution deposition. While initial observations on PLD films looking at the behavior of T-m (the temperature at which the maximum dielectric constant was observed) and T-c(*) (from Curie-Weiss analysis) suggested that the paraelectric-ferroelectric phase transition was progressively depressed in temperature as BST film thickness was reduced, further work suggested that this was not the case. Rather, it appears that the temperatures at which phase transitions occur in the thin films are independent of film thickness. Further, the fact that in many cases three transitions are observable, suggests that the sequence of symmetry transitions that occur in the thin films are the same as in bulk single crystals. This new observation could have implications for the validity of the theoretically produced thin film phase diagrams derived by Pertsev [Phys. Rev. Lett. 80, 1988 (1998)] and extended by Ban and Alpay [J. Appl. Phys. 91, 9288 (2002)]. In addition, the fact that T-m measured for virgin films does not correlate well with the inherent phase transition behavior, suggests that the use of T-m alone to infer information about the thermodynamics of thin film capacitor behavior, may not be sufficient. (C) 2004 American Institute of Physics.
000035410 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000035410 588__ $$aDataset connected to Web of Science
000035410 650_7 $$2WoSType$$aJ
000035410 7001_ $$0P:(DE-HGF)0$$aBowman, R. M.$$b1
000035410 7001_ $$0P:(DE-HGF)0$$aGregg, J. M.$$b2
000035410 7001_ $$0P:(DE-HGF)0$$aKut, J.$$b3
000035410 7001_ $$0P:(DE-HGF)0$$aRios, S.$$b4
000035410 7001_ $$0P:(DE-HGF)0$$aDawber, M.$$b5
000035410 7001_ $$0P:(DE-Juel1)VDB26957$$aRüdiger, A.$$b6$$uFZJ
000035410 7001_ $$0P:(DE-HGF)0$$aScott, J. F.$$b7
000035410 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.1759084$$gVol. 96, p. 555 - 562$$p555 - 562$$q96<555 - 562$$tJournal of applied physics$$v96$$x0021-8979$$y2004
000035410 8567_ $$uhttp://hdl.handle.net/2128/988$$uhttp://dx.doi.org/10.1063/1.1759084
000035410 8564_ $$uhttps://juser.fz-juelich.de/record/35410/files/42487.pdf$$yOpenAccess
000035410 8564_ $$uhttps://juser.fz-juelich.de/record/35410/files/42487.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000035410 8564_ $$uhttps://juser.fz-juelich.de/record/35410/files/42487.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000035410 8564_ $$uhttps://juser.fz-juelich.de/record/35410/files/42487.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000035410 909CO $$ooai:juser.fz-juelich.de:35410$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000035410 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000035410 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000035410 9141_ $$y2004
000035410 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000035410 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x0
000035410 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x1$$z381
000035410 970__ $$aVDB:(DE-Juel1)42487
000035410 980__ $$aVDB
000035410 980__ $$aJUWEL
000035410 980__ $$aConvertedRecord
000035410 980__ $$ajournal
000035410 980__ $$aI:(DE-Juel1)PGI-7-20110106
000035410 980__ $$aI:(DE-Juel1)VDB381
000035410 980__ $$aUNRESTRICTED
000035410 980__ $$aFullTexts
000035410 9801_ $$aFullTexts
000035410 981__ $$aI:(DE-Juel1)PGI-7-20110106
000035410 981__ $$aI:(DE-Juel1)VDB381