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@ARTICLE{Lookman:35410,
      author       = {Lookman, I. V. and Bowman, R. M. and Gregg, J. M. and Kut,
                      J. and Rios, S. and Dawber, M. and Rüdiger, A. and Scott,
                      J. F.},
      title        = {{T}hickness independence of true phase transition
                      temperatures in barium strontium titanate films},
      journal      = {Journal of applied physics},
      volume       = {96},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-35410},
      pages        = {555 - 562},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The functional properties of two types of barium strontium
                      titanate (BST) thin film capacitor structures were studied:
                      one set of structures was made using pulsed-laser deposition
                      (PLD) and the other using chemical solution deposition.
                      While initial observations on PLD films looking at the
                      behavior of T-m (the temperature at which the maximum
                      dielectric constant was observed) and T-c(*) (from
                      Curie-Weiss analysis) suggested that the
                      paraelectric-ferroelectric phase transition was
                      progressively depressed in temperature as BST film thickness
                      was reduced, further work suggested that this was not the
                      case. Rather, it appears that the temperatures at which
                      phase transitions occur in the thin films are independent of
                      film thickness. Further, the fact that in many cases three
                      transitions are observable, suggests that the sequence of
                      symmetry transitions that occur in the thin films are the
                      same as in bulk single crystals. This new observation could
                      have implications for the validity of the theoretically
                      produced thin film phase diagrams derived by Pertsev [Phys.
                      Rev. Lett. 80, 1988 (1998)] and extended by Ban and Alpay
                      [J. Appl. Phys. 91, 9288 (2002)]. In addition, the fact that
                      T-m measured for virgin films does not correlate well with
                      the inherent phase transition behavior, suggests that the
                      use of T-m alone to infer information about the
                      thermodynamics of thin film capacitor behavior, may not be
                      sufficient. (C) 2004 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / CNI},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000222093300089},
      doi          = {10.1063/1.1759084},
      url          = {https://juser.fz-juelich.de/record/35410},
}