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| 005 | 20200423203655.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://jap.aip.org |
| 024 | 7 | _ | |a 10.1063/1.1759084 |2 DOI |
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| 024 | 7 | _ | |a 2128/988 |2 Handle |
| 024 | 7 | _ | |2 Handle |a 2128/990 |
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| 100 | 1 | _ | |a Lookman, I. V. |b 0 |0 P:(DE-HGF)0 |
| 245 | _ | _ | |a Thickness independence of true phase transition temperatures in barium strontium titanate films |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2004 |
| 300 | _ | _ | |a 555 - 562 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |a Journal of Applied Physics |x 0021-8979 |0 3051 |v 96 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The functional properties of two types of barium strontium titanate (BST) thin film capacitor structures were studied: one set of structures was made using pulsed-laser deposition (PLD) and the other using chemical solution deposition. While initial observations on PLD films looking at the behavior of T-m (the temperature at which the maximum dielectric constant was observed) and T-c(*) (from Curie-Weiss analysis) suggested that the paraelectric-ferroelectric phase transition was progressively depressed in temperature as BST film thickness was reduced, further work suggested that this was not the case. Rather, it appears that the temperatures at which phase transitions occur in the thin films are independent of film thickness. Further, the fact that in many cases three transitions are observable, suggests that the sequence of symmetry transitions that occur in the thin films are the same as in bulk single crystals. This new observation could have implications for the validity of the theoretically produced thin film phase diagrams derived by Pertsev [Phys. Rev. Lett. 80, 1988 (1998)] and extended by Ban and Alpay [J. Appl. Phys. 91, 9288 (2002)]. In addition, the fact that T-m measured for virgin films does not correlate well with the inherent phase transition behavior, suggests that the use of T-m alone to infer information about the thermodynamics of thin film capacitor behavior, may not be sufficient. (C) 2004 American Institute of Physics. |
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| 700 | 1 | _ | |a Scott, J. F. |b 7 |0 P:(DE-HGF)0 |
| 773 | _ | _ | |a 10.1063/1.1759084 |g Vol. 96, p. 555 - 562 |p 555 - 562 |q 96<555 - 562 |0 PERI:(DE-600)1476463-5 |t Journal of applied physics |v 96 |y 2004 |x 0021-8979 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.1759084 |u http://hdl.handle.net/2128/988 |
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