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000036405 1001_ $$0P:(DE-Juel1)VDB7045$$aThönissen, M.$$b0$$eCorresponding author$$uFZJ
000036405 245__ $$aSpektroskopische Charakterisierung von Schichten und Schichtsystemen aus porösem Silicium im Hinblick auf optische und optoelektronische Anwendungen
000036405 260__ $$aJülich$$bForschungszentrum, Zentralbibliothek$$c1999
000036405 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis
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000036405 4900_ $$0PERI:(DE-600)2414853-2$$812605$$aBerichte des Forschungszentrums Jülich$$v3628$$x0944-2952
000036405 502__ $$aAachen, Techn. Hochsch., Diss., 1999$$bDr. (FH)$$cTechn. Hochsch. Aachen$$d1999
000036405 500__ $$aRecord converted from JUWEL: 18.07.2013
000036405 500__ $$aRecord converted from VDB: 12.11.2012
000036405 520__ $$aInvestigations were made on both, single layers and layer systems of porous silicon, using optical spectroscopy, gravimetry, diffractrometry and topographic methods, and REM and TEM aswell. Main emphasis of the investigations was concentrated to the optimization of single layers and layer systems with a view to application and basic studies, aiming at an industrial applicability in optical and opto-electronic components. The results of the investigations presented here show new ways of applications by using porous silicon, e.g., electrically controllable filter structures on the basis of liquid crystals, diffraction gratings of porous silicon and spectral sensitive photodiodes.
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