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@PHDTHESIS{Roschek:37403,
      author       = {Roschek, Tobias},
      title        = {{M}icrocrystalline silicon solar cells prepared by 13.56
                      {MH}z {PECVD} : prerequisites for high quality material at
                      high growth rates},
      volume       = {4083},
      issn         = {0944-2952},
      school       = {Univ. Düsseldorf},
      type         = {Dr. (Univ.)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-37403, Juel-4083},
      series       = {Berichte des Forschungszentrums Jülich},
      pages        = {VIII, 106 p.},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012; Düsseldorf, Univ.,
                      Diss., 2003},
      abstract     = {Topic of this thesis was the development of thin film solar
                      cells based on microcrystalline silicon prepared by 13.56
                      MHz PECVD (plasma-enhanced chemical vapor deposition) at
                      high deposition rates. Comprehensive solar cell studies,
                      which were accompanied by material studies, resulted in the
                      identification of the most important prerequisites for high
                      quality solar cells at high growth rates. During the
                      development of solar cells in various pressure regimes, a
                      high deposition pressure emerged as key parameter for good
                      solar cell performance at high deposition rates. Plasma
                      ignition at high deposition pressures (>10 Torr) was only
                      possible at low electrode distances. Other important factors
                      were a high total gas flow and a substrate temperature,
                      which should not exceed $\sim$200 °C. As alternative
                      approach deposition by pulsed plasma excitation was
                      investigated. At deposition rates up to $\sim$5
                      $\mathring{A}$/s efficiencies comparable to continuous
                      excitation were achieved, at higher rates the efficiency
                      significantly decreased. In summary we succeeded in
                      developing high quality solar cells at high deposition
                      rates. Highlights were solar cells with 9.1, 9.0 and 8.9 \%
                      efficiency for deposition rates of 1, 3 and 4
                      $\mathring{A}$/s, respectively. At 9 $\mathring{A}$/s still
                      a high efficiency of 7.9 \% was achieved. Furthermore we
                      gained an understanding of the prerequisites regarding the
                      plasma properties to achieve high growth rates and high
                      quality material.},
      cin          = {IPV},
      cid          = {I:(DE-Juel1)VDB46},
      pnm          = {Photovoltaik},
      pid          = {G:(DE-Juel1)FUEK247},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/37403},
}