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@PHDTHESIS{Stock:37407,
author = {Stock, Jürgen},
title = {{H}erstellung und {C}harakterisierung von {G}a{A}s
{G}unn-{D}ioden für {A}nwendungen bei 77 {GH}z},
volume = {4069},
issn = {0944-2952},
school = {Techn. Hochsch. Aachen},
type = {Dr. (FH)},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {PreJuSER-37407, Juel-4069},
series = {Berichte des Forschungszentrums Jülich},
pages = {III, 137 p.},
year = {2003},
note = {Record converted from VDB: 12.11.2012; Aachen, Techn.
Hochsch., Diss., 2003},
abstract = {In the present thesis the properties of GaAs Gunn diodes
with a hot electron injector have been investigated which
are used to generate microwave power e.g. in radar and
satellite technology or in intelligent control systems in
the field of automotive electronics. The diodes have been
characterized using different measurement methods which
allow the analysis of the DC curves, the small signal
behavior and the second harmonie mode operation in an
oscillator. Furthermore the process technology has been
developed to fabricate Gunn diode chips with integrated heat
sink used in oscillators and coplanar Gunn diodes for small
signal measurements. The operation principle of a Gunn diode
is based on the so-called Gunn effect which originates from
a particular electron scattering process in the conduction
band of GaAs. Using a hot electron injector consisting of a
linearly graded AlGaAs barrier and an adjacent delta doped
layer the scattering process is reinforced and the
efficiency of the device is improved. It has been shown that
an undoped GaAs spacer layer between the AlGaAs barrier and
the delta doped layer can prevent the unintentional
diffusion of doping atoms towards the AlGaAs barrier and
therefore enhances the effect of the injector. The
homogeneity and reproducibility of the fabrication process
has been increased compared to existing methods by
introducing an etch stop layer for the substrate removal and
by using a plasma etching process for the definition of the
Gunn diode mesa.},
cin = {ISG-1},
cid = {I:(DE-Juel1)VDB41},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/37407},
}