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@PHDTHESIS{Stock:37407,
      author       = {Stock, Jürgen},
      title        = {{H}erstellung und {C}harakterisierung von {G}a{A}s
                      {G}unn-{D}ioden für {A}nwendungen bei 77 {GH}z},
      volume       = {4069},
      issn         = {0944-2952},
      school       = {Techn. Hochsch. Aachen},
      type         = {Dr. (FH)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-37407, Juel-4069},
      series       = {Berichte des Forschungszentrums Jülich},
      pages        = {III, 137 p.},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012; Aachen, Techn.
                      Hochsch., Diss., 2003},
      abstract     = {In the present thesis the properties of GaAs Gunn diodes
                      with a hot electron injector have been investigated which
                      are used to generate microwave power e.g. in radar and
                      satellite technology or in intelligent control systems in
                      the field of automotive electronics. The diodes have been
                      characterized using different measurement methods which
                      allow the analysis of the DC curves, the small signal
                      behavior and the second harmonie mode operation in an
                      oscillator. Furthermore the process technology has been
                      developed to fabricate Gunn diode chips with integrated heat
                      sink used in oscillators and coplanar Gunn diodes for small
                      signal measurements. The operation principle of a Gunn diode
                      is based on the so-called Gunn effect which originates from
                      a particular electron scattering process in the conduction
                      band of GaAs. Using a hot electron injector consisting of a
                      linearly graded AlGaAs barrier and an adjacent delta doped
                      layer the scattering process is reinforced and the
                      efficiency of the device is improved. It has been shown that
                      an undoped GaAs spacer layer between the AlGaAs barrier and
                      the delta doped layer can prevent the unintentional
                      diffusion of doping atoms towards the AlGaAs barrier and
                      therefore enhances the effect of the injector. The
                      homogeneity and reproducibility of the fabrication process
                      has been increased compared to existing methods by
                      introducing an etch stop layer for the substrate removal and
                      by using a plasma etching process for the definition of the
                      Gunn diode mesa.},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/37407},
}