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@PHDTHESIS{Schuller:37428,
      author       = {Schuller, Bernd Thomas},
      title        = {{S}trukturelle und optische {C}harakterisierung von
                      $\beta$-{F}e{S}i$_{2}$ - {S}i - {H}eterostrukturen},
      volume       = {3986},
      issn         = {0944-2952},
      school       = {Techn. Hochsch. Aachen},
      type         = {Dr. (FH)},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {PreJuSER-37428, Juel-3986},
      series       = {Berichte des Forschungszentrums Jülich},
      pages        = {VII, 92 p.},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012; Aachen, Techn.
                      Hochsch., Diss., 2002},
      abstract     = {Semiconducting iron disilicide $\beta$-FeSi$_{2}$ is a
                      promising material for possible applications in
                      silicon-based optoelectronics. The bandgap of iron
                      disilicide has a value of about 0.8 eV (1.5$\mu$m), which is
                      of enormous interest for fibre-based communications.
                      Recently, iron disilicide precipitates in a silicon matrix
                      have been investigated intensively, since these structures
                      Show good luminescence at low temperatures. However, it is
                      still a matter of debate whether the emission is due to
                      recombination in the silicide, or whether it originates in
                      silicon defects. Furthermore, an interesting question is the
                      nature of the silicide bandgap in these precipitates. In
                      this work, iron disilicide precipitates have been fabricated
                      by ion Implantation and subsequent annealing. This resulted
                      in precipitates having linear dimensions of 50-100 nm in a
                      silicon matrix. These were characterised structurally by
                      transmission electron microscopy, Raman spectroscopy and
                      Rutherford backscattering. Optical characterisation was done
                      by photoluminescence spectroscopy (PL). The results of the
                      structural investigations show that the iron disilicide
                      precipitates are Single crystal, and basically unstrained.
                      The lattice mismatch between silicide and the silicon matrix
                      is compensated by misfit dislocations in the silicon. At low
                      temperatures, the Samples Show good luminesence, the
                      efficiency has been estimated at 0.1\%. The PL intensity
                      decreases rapidly with increasing temperature, at room
                      temperature the PL is hard to detect. Time resolved
                      luminescence measurements at the wavelength of the main peak
                      (1.5 $\mu$m) show a decay time of 4$\mu$s at a temperature
                      of 10K. The results of the luminescence measurements can be
                      explained either by recombination at silicon defects of by
                      an indirect transition within the silicide. In view of the
                      long lifetime and low efficiency of the luminescence, a
                      direct transition within the silicide can be ruled out.},
      cin          = {ISG-3},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      typ          = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/37428},
}