% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@PHDTHESIS{Schuller:37428,
author = {Schuller, Bernd Thomas},
title = {{S}trukturelle und optische {C}harakterisierung von
$\beta$-{F}e{S}i$_{2}$ - {S}i - {H}eterostrukturen},
volume = {3986},
issn = {0944-2952},
school = {Techn. Hochsch. Aachen},
type = {Dr. (FH)},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {PreJuSER-37428, Juel-3986},
series = {Berichte des Forschungszentrums Jülich},
pages = {VII, 92 p.},
year = {2003},
note = {Record converted from VDB: 12.11.2012; Aachen, Techn.
Hochsch., Diss., 2002},
abstract = {Semiconducting iron disilicide $\beta$-FeSi$_{2}$ is a
promising material for possible applications in
silicon-based optoelectronics. The bandgap of iron
disilicide has a value of about 0.8 eV (1.5$\mu$m), which is
of enormous interest for fibre-based communications.
Recently, iron disilicide precipitates in a silicon matrix
have been investigated intensively, since these structures
Show good luminescence at low temperatures. However, it is
still a matter of debate whether the emission is due to
recombination in the silicide, or whether it originates in
silicon defects. Furthermore, an interesting question is the
nature of the silicide bandgap in these precipitates. In
this work, iron disilicide precipitates have been fabricated
by ion Implantation and subsequent annealing. This resulted
in precipitates having linear dimensions of 50-100 nm in a
silicon matrix. These were characterised structurally by
transmission electron microscopy, Raman spectroscopy and
Rutherford backscattering. Optical characterisation was done
by photoluminescence spectroscopy (PL). The results of the
structural investigations show that the iron disilicide
precipitates are Single crystal, and basically unstrained.
The lattice mismatch between silicide and the silicon matrix
is compensated by misfit dislocations in the silicon. At low
temperatures, the Samples Show good luminesence, the
efficiency has been estimated at 0.1\%. The PL intensity
decreases rapidly with increasing temperature, at room
temperature the PL is hard to detect. Time resolved
luminescence measurements at the wavelength of the main peak
(1.5 $\mu$m) show a decay time of 4$\mu$s at a temperature
of 10K. The results of the luminescence measurements can be
explained either by recombination at silicon defects of by
an indirect transition within the silicide. In view of the
long lifetime and low efficiency of the luminescence, a
direct transition within the silicide can be ruled out.},
cin = {ISG-3},
cid = {I:(DE-Juel1)VDB43},
pnm = {Kondensierte Materie},
pid = {G:(DE-Juel1)FUEK242},
typ = {PUB:(DE-HGF)11 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/37428},
}