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Dissertation / PhD Thesis PreJuSER-37528
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MOVPE Growth and Characterization of AlxGa1-xN/GaN Heterostructures for HEMT Application



2003
FZJ, Institut für Schichten und Grenzflächen Jülich

Jülich : FZJ, Institut für Schichten und Grenzflächen () = Aachen, Techn. Hochsch., Diss., 2003


Note: Record converted from VDB: 12.11.2012
Note: Aachen, Techn. Hochsch., Diss., 2003
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
Research Program(s):
  1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: Nachtrag
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The record appears in these collections:
Document types > Theses > Ph.D. Theses
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
 Record created 2012-11-13, last modified 2018-02-10
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