000037843 001__ 37843
000037843 005__ 20240610121317.0
000037843 017__ $$aThis version is available at the following Publisher URL: http://prb.aps.org
000037843 0247_ $$2DOI$$a10.1103/PhysRevB.64.245413
000037843 0247_ $$2WOS$$aWOS:000173082500107
000037843 0247_ $$2Handle$$a2128/1079
000037843 037__ $$aPreJuSER-37843
000037843 041__ $$aeng
000037843 082__ $$a530
000037843 084__ $$2WoS$$aPhysics, Condensed Matter
000037843 1001_ $$0P:(DE-HGF)0$$aJiang, X.$$b0
000037843 245__ $$aEpitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation
000037843 260__ $$aCollege Park, Md.$$bAPS$$c2001
000037843 300__ $$a245413-1 - 245413-5
000037843 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000037843 3367_ $$2DataCite$$aOutput Types/Journal article
000037843 3367_ $$00$$2EndNote$$aJournal Article
000037843 3367_ $$2BibTeX$$aARTICLE
000037843 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000037843 3367_ $$2DRIVER$$aarticle
000037843 440_0 $$04919$$aPhysical Review B$$v64$$x1098-0121
000037843 500__ $$aRecord converted from VDB: 12.11.2012
000037843 520__ $$aIn a recent paper [Phys. Rev. Lett. 84, 3658 (2000)] a direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. Small (001) terraces with dimensions of several atomic distances at the site of nucleation are observed due to the roughening of silicon surface and lead to the grain misorientation, To further improve the understanding of the subject the microstructure and interfaces in diamond films on silicon substrates grown in the stages of the bias-enhanced nucleation (BEN) and the initial crystal growth were studied by means of atomic force microscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. It is showed that the roughness of the wafer starts to increase from the beginning of the BEN and the renucleation on existing crystallites induced by the ion bombardment leading to the loss of epitaxy.
000037843 536__ $$0G:(DE-Juel1)FUEK54$$2G:(DE-HGF)$$aFestkörperforschung für die Informationstechnik$$c23.42.0$$x0
000037843 542__ $$2Crossref$$i2001-12-03$$uhttp://link.aps.org/licenses/aps-default-license
000037843 588__ $$aDataset connected to Web of Science
000037843 650_7 $$2WoSType$$aJ
000037843 7001_ $$0P:(DE-Juel1)VDB5020$$aJia, C. L.$$b1$$uFZJ
000037843 7001_ $$0P:(DE-HGF)0$$aSzameitat, M.$$b2
000037843 7001_ $$0P:(DE-HGF)0$$aRickers, C.$$b3
000037843 77318 $$2Crossref$$3journal-article$$a10.1103/physrevb.64.245413$$bAmerican Physical Society (APS)$$d2001-12-03$$n24$$p245413$$tPhysical Review B$$v64$$x0163-1829$$y2001
000037843 773__ $$0PERI:(DE-600)2844160-6$$a10.1103/PhysRevB.64.245413$$gVol. 64, p. 245413-1 - 245413-5$$n24$$p245413$$q64<245413-1 - 245413-5$$tPhysical review / B$$v64$$x0163-1829$$y2001
000037843 8564_ $$uhttps://juser.fz-juelich.de/record/37843/files/4721.pdf$$yOpenAccess
000037843 8564_ $$uhttps://juser.fz-juelich.de/record/37843/files/4721.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000037843 8564_ $$uhttps://juser.fz-juelich.de/record/37843/files/4721.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000037843 8564_ $$uhttps://juser.fz-juelich.de/record/37843/files/4721.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000037843 909CO $$ooai:juser.fz-juelich.de:37843$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000037843 9131_ $$0G:(DE-Juel1)FUEK54$$bInformationstechnik$$k23.42.0$$lGrundlagenforschung zur Informationstechnik$$vFestkörperforschung für die Informationstechnik$$x0
000037843 9141_ $$y2001
000037843 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000037843 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000037843 9201_ $$0I:(DE-Juel1)VDB37$$d31.12.2006$$gIFF$$kIFF-IMF$$lMikrostrukturforschung$$x0
000037843 970__ $$aVDB:(DE-Juel1)4721
000037843 9801_ $$aFullTexts
000037843 980__ $$aVDB
000037843 980__ $$aJUWEL
000037843 980__ $$aConvertedRecord
000037843 980__ $$ajournal
000037843 980__ $$aI:(DE-Juel1)PGI-5-20110106
000037843 980__ $$aUNRESTRICTED
000037843 980__ $$aFullTexts
000037843 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000037843 981__ $$aI:(DE-Juel1)PGI-5-20110106
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1103/PhysRevLett.84.3658$$p3658 -$$tPhys. Rev. Lett.$$v84$$y2000
000037843 999C5 $$1J. C. Angus$$2Crossref$$9-- missing cx lookup --$$a10.1126/science.241.4868.913$$p913 -$$tScience$$v241$$y1988
000037843 999C5 $$1A. T. Collins$$2Crossref$$9-- missing cx lookup --$$a10.1088/0268-1242/4/8/001$$p605 -$$tSemicond. Sci. Technol.$$v4$$y1989
000037843 999C5 $$1W. A. Yarbrough$$2Crossref$$9-- missing cx lookup --$$a10.1126/science.247.4943.688$$p688 -$$tScience$$v247$$y1990
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1016/0925-9635(93)90282-7$$p1112 -$$tDiamond Relat. Mater.$$v2$$y1993
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1063/1.109041$$p3438 -$$tAppl. Phys. Lett.$$v62$$y1993
000037843 999C5 $$1B. R. Stoner$$2Crossref$$9-- missing cx lookup --$$a10.1557/JMR.1993.1334$$p1334 -$$tJ. Mater. Res.$$v8$$y1993
000037843 999C5 $$1S.-T. Lee$$2Crossref$$9-- missing cx lookup --$$a10.1016/S0927-796X(99)00003-0$$p123 -$$tMater. Sci. Eng., R.$$v25$$y1999
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1063/1.367012$$p2511 -$$tJ. Appl. Phys.$$v83$$y1998
000037843 999C5 $$1D. Wittorf$$2Crossref$$oD. Wittorf MRS Symposia Proceedings 1997$$tMRS Symposia Proceedings$$y1997
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1063/1.117564$$p3902 -$$tAppl. Phys. Lett.$$v69$$y1996
000037843 999C5 $$1J. Michler$$2Crossref$$9-- missing cx lookup --$$a10.1063/1.366672$$p187 -$$tJ. Appl. Phys.$$v83$$y1998
000037843 999C5 $$1X. Jiang$$2Crossref$$9-- missing cx lookup --$$a10.1002/pssa.2211540114$$p175 -$$tPhys. Status Solidi$$v154$$y1996
000037843 999C5 $$1M. Schreck$$2Crossref$$9-- missing cx lookup --$$a10.1063/1.364319$$p3092 -$$tJ. Appl. Phys.$$v81$$y1977