Hauptseite > Publikationsdatenbank > Epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation > print

001     37843
005     20240610121317.0
017 _ _ |a This version is available at the following Publisher URL: http://prb.aps.org
024 7 _ |a 10.1103/PhysRevB.64.245413
|2 DOI
024 7 _ |a WOS:000173082500107
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024 7 _ |a 2128/1079
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037 _ _ |a PreJuSER-37843
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Jiang, X.
|0 P:(DE-HGF)0
|b 0
245 _ _ |a Epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation
260 _ _ |a College Park, Md.
|b APS
|c 2001
300 _ _ |a 245413-1 - 245413-5
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Physical Review B
|x 1098-0121
|0 4919
|v 64
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In a recent paper [Phys. Rev. Lett. 84, 3658 (2000)] a direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. Small (001) terraces with dimensions of several atomic distances at the site of nucleation are observed due to the roughening of silicon surface and lead to the grain misorientation, To further improve the understanding of the subject the microstructure and interfaces in diamond films on silicon substrates grown in the stages of the bias-enhanced nucleation (BEN) and the initial crystal growth were studied by means of atomic force microscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. It is showed that the roughness of the wafer starts to increase from the beginning of the BEN and the renucleation on existing crystallites induced by the ion bombardment leading to the loss of epitaxy.
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588 _ _ |a Dataset connected to Web of Science
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700 1 _ |a Jia, C. L.
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700 1 _ |a Szameitat, M.
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700 1 _ |a Rickers, C.
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773 1 8 |a 10.1103/physrevb.64.245413
|b American Physical Society (APS)
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|t Physical Review B
|v 64
|y 2001
|x 0163-1829
773 _ _ |a 10.1103/PhysRevB.64.245413
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|v 64
|y 2001
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999 C 5 |a 10.1103/PhysRevLett.84.3658
|9 -- missing cx lookup --
|1 X. Jiang
|p 3658 -
|2 Crossref
|t Phys. Rev. Lett.
|v 84
|y 2000
999 C 5 |a 10.1126/science.241.4868.913
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|p 913 -
|2 Crossref
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|2 Crossref
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999 C 5 |a 10.1016/0925-9635(93)90282-7
|9 -- missing cx lookup --
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|p 1112 -
|2 Crossref
|t Diamond Relat. Mater.
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999 C 5 |a 10.1063/1.109041
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|p 3438 -
|2 Crossref
|t Appl. Phys. Lett.
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|2 Crossref
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|2 Crossref
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|p 3902 -
|2 Crossref
|t Appl. Phys. Lett.
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|p 187 -
|2 Crossref
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|p 175 -
|2 Crossref
|t Phys. Status Solidi
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