Hauptseite > Publikationsdatenbank > Underpotential Deposition of Cd on Ag(111): An in situ STM study > print

001     38552
005     20180210130600.0
024 7 _ |2 DOI
|a 10.1016/j.susc.2004.11.037
024 7 _ |2 WOS
|a WOS:000226872600004
037 _ _ |a PreJuSER-38552
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Garcia, S. G.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Underpotential Deposition of Cd on Ag(111): An in situ STM study
260 _ _ |a Amsterdam
|b Elsevier
|c 2005
300 _ _ |a 9 - 18
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 576
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The kinetics and mechanism of Cd underpotential deposition (UPD) and involved surface alloy formation processes the system Ag(1 1 1)/Cd2+,SO42- are studied by means of combined electrochemical measurements and in situ scanning tunneling microscopy (STM). The results show that the UPD process starts with a formation of an expanded (diluted) adlayer with a superlattice structure Ag(1 1 1)-(root3- x root19)R23.4degrees. In the underpotential range 50 mV < DeltaE < 80 mV this adlayer transforms to a condensed close packed Cd monolayer via a first order phase transition. At long polarization times the condensed monolayer undergoes structural changes involving place exchange processes between Cd atoms and surface Ag atoms. A formation of a second Cd monolayer and a significant Ag-Cd surface alloying take place at lower underpotentials (DeltaE < 50 mV). The kinetics of surface alloying are analyzed on the basis of a recently proposed diffusion model including a relatively fast initial formation of a very thin surface alloy film and a subsequent slow alloy growth controlled by solid state diffusion. The anodic dealloying results in an appearance of monatornically deep pits, which disappear quickly at relatively high underpotentials (DeltaE > 550 mV) indicating a high mobility of surface Ag atoms. (C) 2004 Elsevier B.V. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a STM
653 2 0 |2 Author
|a underpotential deposition
653 2 0 |2 Author
|a alloy formation
653 2 0 |2 Author
|a cadmium
653 2 0 |2 Author
|a silver
700 1 _ |a Salinas, D. R.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Staikov, G.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB13645
773 _ _ |a 10.1016/j.susc.2004.11.037
|g Vol. 576, p. 9 - 18
|p 9 - 18
|q 576<9 - 18
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 576
|y 2005
|x 0039-6028
856 7 _ |u http://dx.doi.org/10.1016/j.susc.2004.11.037
909 C O |o oai:juser.fz-juelich.de:38552
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913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
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914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
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970 _ _ |a VDB:(DE-Juel1)49711
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980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106
981 _ _ |a I:(DE-Juel1)VDB381

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