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@ARTICLE{Wiebe:38554,
      author       = {Wiebe, J. and Sacharow, L. and Wachowiak, A. and Bihlmayer,
                      G. and Heinze, S. and Blügel, S. and Morgenstern, M. and
                      Wiesendanger, R.},
      title        = {{S}canning tunneling spectroscopy on
                      {C}o(0001):{S}pectroscopic signature of stacking faults and
                      dislocation lines},
      journal      = {Physical review / B},
      volume       = {70},
      number       = {3},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {PreJuSER-38554},
      pages        = {035404},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The growth morphology and electronic structure of Co(0001)
                      grown on W(110) are studied using scanning tunneling
                      microscopy and scanning tunneling spectroscopy (STS) at T=6
                      K. Depending on growth conditions, continuous Co films or Co
                      islands on top of a wetting layer are formed. Within the
                      continuous films, dislocation lines appear and increase in
                      density after annealing. Co islands and films exhibit dI/dV
                      curves with a pronounced peak at -0.3 eV below the Fermi
                      energy. The intensity of this peak is changing in different
                      areas of the surface. Using monolayer high islands with a
                      different shape deposited on the same Co layer we attribute
                      the different intensity to a different stacking of the Co
                      surface. The change in intensity is reproduced by
                      first-principles electronic structure calculations, which
                      reveal that the peak is caused by a d(3z)(2)-r(2)-like
                      surface resonance of a minority-spin character more strongly
                      coupled to the bulk states in the case of hcp (ABA) stacking
                      than in the case of fcc (ABC) stacking. An increased STS
                      intensity of the surface resonance was also found above
                      dislocation lines located at the Co/W interface.},
      keywords     = {J (WoSType)},
      cin          = {IFF-TH-I},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB30},
      pnm          = {Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK242},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000222996700092},
      doi          = {10.1103/PhysRevB.70.035404},
      url          = {https://juser.fz-juelich.de/record/38554},
}