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000003952 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000003952 084__ $$2WoS$$aMaterials Science, Coatings & Films
000003952 084__ $$2WoS$$aPhysics, Applied
000003952 084__ $$2WoS$$aPhysics, Condensed Matter
000003952 1001_ $$0P:(DE-HGF)0$$aBräuhaus, D.$$b0
000003952 245__ $$aRadiofrequency sputter deposition of germanium-sselenide thin films for resistive switching
000003952 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2008
000003952 300__ $$a1223 - 1226
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000003952 520__ $$aThe superionic conducting properties of Ag-doped GeSe thin films make this material a promising candidate for future, resistively switching-based memories allowing for high integration densities and short switching times. This paper reports on the radiofrequency sputter deposition of GeSe thin films and on the properties of the deposited thin films with respect to non-volatile memory applications. As sputter deposition is a widely used deposition method for industrial applications, we focused on the influences of deposition parameters as power and pressure to examine the suitability of sputter deposition for fabricating random access memories using GeSe-based resistive memory cells. Multiple characterization methods were utilized to determine the quality of the deposited thin films. The results of our measurements showed that we obtained smooth, dense and amorphous layers, which reveal good switching properties after doping with Ag, suitable for the use in GeSe-based memories. (C) 2007 Elsevier B.V. All rights reserved.
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000003952 65320 $$2Author$$agermanium-selenide
000003952 65320 $$2Author$$athin film
000003952 65320 $$2Author$$asputter deposition
000003952 65320 $$2Author$$aresistive switching
000003952 65320 $$2Author$$amemory application
000003952 7001_ $$0P:(DE-Juel1)VDB61376$$aSchindler, C.$$b1$$uFZJ
000003952 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b2
000003952 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
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000003952 8567_ $$uhttp://dx.doi.org/10.1016/j.tsf.2007.05.074
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