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@ARTICLE{Bruhaus:3952,
      author       = {Bräuhaus, D. and Schindler, C. and Böttger, U. and Waser,
                      R.},
      title        = {{R}adiofrequency sputter deposition of germanium-sselenide
                      thin films for resistive switching},
      journal      = {Thin solid films},
      volume       = {516},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-3952},
      pages        = {1223 - 1226},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The superionic conducting properties of Ag-doped GeSe thin
                      films make this material a promising candidate for future,
                      resistively switching-based memories allowing for high
                      integration densities and short switching times. This paper
                      reports on the radiofrequency sputter deposition of GeSe
                      thin films and on the properties of the deposited thin films
                      with respect to non-volatile memory applications. As sputter
                      deposition is a widely used deposition method for industrial
                      applications, we focused on the influences of deposition
                      parameters as power and pressure to examine the suitability
                      of sputter deposition for fabricating random access memories
                      using GeSe-based resistive memory cells. Multiple
                      characterization methods were utilized to determine the
                      quality of the deposited thin films. The results of our
                      measurements showed that we obtained smooth, dense and
                      amorphous layers, which reveal good switching properties
                      after doping with Ag, suitable for the use in GeSe-based
                      memories. (C) 2007 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT / CNI},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)VDB381},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000252980400056},
      doi          = {10.1016/j.tsf.2007.05.074},
      url          = {https://juser.fz-juelich.de/record/3952},
}