000003953 001__ 3953
000003953 005__ 20200423202457.0
000003953 0247_ $$2DOI$$a10.1063/1.2976347
000003953 0247_ $$2WOS$$aWOS:000259853600104
000003953 0247_ $$2Handle$$a2128/17194
000003953 037__ $$aPreJuSER-3953
000003953 041__ $$aeng
000003953 082__ $$a530
000003953 084__ $$2WoS$$aPhysics, Applied
000003953 1001_ $$0P:(DE-HGF)0$$aZembilgotov, A.G.$$b0
000003953 245__ $$aEffect of in-plane shear strain on phase states and dielectric properties of epitaxial ferroelectric thin films
000003953 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2008
000003953 300__ $$a54118
000003953 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000003953 3367_ $$2DataCite$$aOutput Types/Journal article
000003953 3367_ $$00$$2EndNote$$aJournal Article
000003953 3367_ $$2BibTeX$$aARTICLE
000003953 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000003953 3367_ $$2DRIVER$$aarticle
000003953 440_0 $$03051$$aJournal of Applied Physics$$v104$$x0021-8979$$y5
000003953 500__ $$aThe research described in this publication was made possible in part by the Deutsche Forschungsgemeinschaft, Germany (Grant No. 436 RUS 17/71/06).
000003953 520__ $$aA modified thermodynamic potential based on the eight-order Landau-Devonshire polynomial is derived for ferroelectric thin films grown on dissimilar substrates that induce anisotropic tensile/compressive strains and the shear strain in the film plane. The effect of the shear strain on the ferroelectric phase transition occurring in considered films is analyzed theoretically. It is shown that the application of the shear strain suppresses the formation of ferroelectric c phase and raises the temperature of aa* phase formation. The directional dependence of in-plane dielectric permittivity of a ferroelectric film is also calculated and compared with the dependence observed in (Ba0.60Sr0.40)TiO3 films deposited on NdGaO3. (c) 2008 American Institute of Physics.
000003953 536__ $$0G:(DE-Juel1)FUEK412$$2G:(DE-HGF)$$aGrundlagen für zukünftige Informationstechnologien$$cP42$$x0
000003953 588__ $$aDataset connected to Web of Science
000003953 650_7 $$2WoSType$$aJ
000003953 7001_ $$0P:(DE-Juel1)VDB3024$$aBöttger, U.$$b1$$uFZJ
000003953 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2$$uFZJ
000003953 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.2976347$$gVol. 104, p. 54118$$p54118$$q104<54118$$tJournal of applied physics$$v104$$x0021-8979$$y2008
000003953 8567_ $$uhttp://dx.doi.org/10.1063/1.2976347
000003953 8564_ $$uhttps://juser.fz-juelich.de/record/3953/files/1.2976347.pdf$$yOpenAccess
000003953 8564_ $$uhttps://juser.fz-juelich.de/record/3953/files/1.2976347.gif?subformat=icon$$xicon$$yOpenAccess
000003953 8564_ $$uhttps://juser.fz-juelich.de/record/3953/files/1.2976347.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000003953 8564_ $$uhttps://juser.fz-juelich.de/record/3953/files/1.2976347.jpg?subformat=icon-700$$xicon-700$$yOpenAccess
000003953 8564_ $$uhttps://juser.fz-juelich.de/record/3953/files/1.2976347.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000003953 909CO $$ooai:juser.fz-juelich.de:3953$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000003953 9141_ $$aNachtrag$$y2008
000003953 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000003953 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000003953 9131_ $$0G:(DE-Juel1)FUEK412$$aDE-HGF$$bSchlüsseltechnologien$$kP42$$lGrundlagen für zukünftige Informationstechnologien (FIT)$$vGrundlagen für zukünftige Informationstechnologien$$x0
000003953 9201_ $$0I:(DE-Juel1)VDB786$$d31.12.2010$$gIFF$$kIFF-6$$lElektronische Materialien$$x0
000003953 9201_ $$0I:(DE-82)080009_20140620$$gJARA$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x1
000003953 970__ $$aVDB:(DE-Juel1)110504
000003953 980__ $$aVDB
000003953 980__ $$aConvertedRecord
000003953 980__ $$ajournal
000003953 980__ $$aI:(DE-Juel1)PGI-7-20110106
000003953 980__ $$aI:(DE-82)080009_20140620
000003953 980__ $$aUNRESTRICTED
000003953 9801_ $$aFullTexts
000003953 981__ $$aI:(DE-Juel1)PGI-7-20110106
000003953 981__ $$aI:(DE-Juel1)VDB881