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@ARTICLE{Zembilgotov:3953,
      author       = {Zembilgotov, A.G. and Böttger, U. and Waser, R.},
      title        = {{E}ffect of in-plane shear strain on phase states and
                      dielectric properties of epitaxial ferroelectric thin films},
      journal      = {Journal of applied physics},
      volume       = {104},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-3953},
      pages        = {54118},
      year         = {2008},
      note         = {The research described in this publication was made
                      possible in part by the Deutsche Forschungsgemeinschaft,
                      Germany (Grant No. 436 RUS 17/71/06).},
      abstract     = {A modified thermodynamic potential based on the eight-order
                      Landau-Devonshire polynomial is derived for ferroelectric
                      thin films grown on dissimilar substrates that induce
                      anisotropic tensile/compressive strains and the shear strain
                      in the film plane. The effect of the shear strain on the
                      ferroelectric phase transition occurring in considered films
                      is analyzed theoretically. It is shown that the application
                      of the shear strain suppresses the formation of
                      ferroelectric c phase and raises the temperature of aa*
                      phase formation. The directional dependence of in-plane
                      dielectric permittivity of a ferroelectric film is also
                      calculated and compared with the dependence observed in
                      (Ba0.60Sr0.40)TiO3 films deposited on NdGaO3. (c) 2008
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-6 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000259853600104},
      doi          = {10.1063/1.2976347},
      url          = {https://juser.fz-juelich.de/record/3953},
}