%0 Journal Article
%A Costina, I.
%A Franchy, R.
%T The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
%J Applied physics letters
%V 78
%@ 0003-6951
%C Melville, NY
%I American Institute of Physics
%M PreJuSER-39770
%P 4139
%D 2001
%Z Record converted from VDB: 12.11.2012
%X The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000169340000026
%R 10.1063/1.1380403
%U https://juser.fz-juelich.de/record/39770