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000039770 084__ $$2WoS$$aPhysics, Applied
000039770 1001_ $$0P:(DE-Juel1)VDB5492$$aCostina, I.$$b0$$uFZJ
000039770 245__ $$aThe band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100)
000039770 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2001
000039770 300__ $$a4139
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000039770 520__ $$aThe vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics.
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000039770 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b1$$uFZJ
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