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@ARTICLE{Costina:39770,
author = {Costina, I. and Franchy, R.},
title = {{T}he band-gap of amorphous and well-ordered {A}l2{O}3 on
{N}i3{A}l(100)},
journal = {Applied physics letters},
volume = {78},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-39770},
pages = {4139},
year = {2001},
note = {Record converted from VDB: 12.11.2012},
abstract = {The vibrational and electronic properties of amorphous and
well-ordered alumina formed on Ni3Al(100) were investigated
using high-resolution electron energy loss spectroscopy. The
structure of well-ordered alumina was analyzed by low-energy
electron diffraction. The amorphous Al2O3 films are prepared
by adsorption of O-2 at room temperature, while the
well-ordered Al2O3 are obtained by direct oxidation of Ni3Al
at 1150 K. The band gap energy is similar to3.2 and similar
to4.3 eV for amorphous alumina and well-ordered alumina thin
films respectively. The lowering of the band gap with
respect to the bulk value of Al2O3 is associated with
defect-induced states located in the band gap. (C) 2001
American Institute of Physics.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {530},
cid = {I:(DE-Juel1)VDB43},
pnm = {Grenzflächenaspekte der Informationstechnik},
pid = {G:(DE-Juel1)FUEK61},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000169340000026},
doi = {10.1063/1.1380403},
url = {https://juser.fz-juelich.de/record/39770},
}