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| 001 | 39770 | ||
| 005 | 20200423203831.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://apl.aip.org |
| 024 | 7 | _ | |a 10.1063/1.1380403 |2 DOI |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Costina, I. |0 P:(DE-Juel1)VDB5492 |b 0 |u FZJ |
| 245 | _ | _ | |a The band-gap of amorphous and well-ordered Al2O3 on Ni3Al(100) |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2001 |
| 300 | _ | _ | |a 4139 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 78 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O-2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is similar to3.2 and similar to4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. (C) 2001 American Institute of Physics. |
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| 700 | 1 | _ | |a Franchy, R. |0 P:(DE-Juel1)VDB5400 |b 1 |u FZJ |
| 773 | _ | _ | |a 10.1063/1.1380403 |g Vol. 78, p. 4139 |p 4139 |q 78<4139 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 78 |y 2001 |x 0003-6951 |
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| 914 | 1 | _ | |y 2001 |
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