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000003983 084__ $$2WoS$$aPhysics, Applied
000003983 1001_ $$0P:(DE-Juel1)VDB67806$$aMenke, T.$$b0$$uFZJ
000003983 245__ $$aSeparation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
000003983 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2009
000003983 300__ $$a066104
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000003983 440_0 $$03051$$aJournal of Applied Physics$$v105$$x0021-8979$$y6
000003983 500__ $$aWe thank R. Muenstermann and K. Shibuya for helpful discussions and Intel Inc. for financial support.
000003983 520__ $$aWe succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive "on" and "off" states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.
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000003983 65320 $$2Author$$aeffusion
000003983 65320 $$2Author$$aelectric impedance
000003983 65320 $$2Author$$aelectroforming
000003983 65320 $$2Author$$airon
000003983 65320 $$2Author$$aniobium
000003983 65320 $$2Author$$aplatinum
000003983 65320 $$2Author$$aSchottky barriers
000003983 65320 $$2Author$$astrontium compounds
000003983 65320 $$2Author$$aswitching
000003983 7001_ $$0P:(DE-Juel1)130836$$aMeuffels, P.$$b1$$uFZJ
000003983 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b2$$uFZJ
000003983 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b3$$uFZJ
000003983 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$uFZJ
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