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@ARTICLE{Menke:3983,
author = {Menke, T. and Meuffels, P. and Dittmann, R. and Szot, K.
and Waser, R.},
title = {{S}eparation of bulk and interface contributions to
electroforming and resistive switching behavior of epitaxial
{F}e-doped {S}r{T}i{O}3},
journal = {Journal of applied physics},
volume = {105},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-3983},
pages = {066104},
year = {2009},
note = {We thank R. Muenstermann and K. Shibuya for helpful
discussions and Intel Inc. for financial support.},
abstract = {We succeeded in the separation of bulk and interface
contributions to the electroforming and resistive switching
behavior of Pt/STO(Fe)/Nb:STO devices by performing
impedance spectroscopy. Two distinctive features observed in
the impedance spectra could be assigned to the STO(Fe) bulk
and to the depletion layer of the Pt/STO(Fe) Schottky
contact. We attribute the resistance change during the dc
forming process to a local bypassing of the depletion layer
caused by oxygen effusion to the environment. By comparing
the impedance spectra in the resistive "on" and "off"
states, we propose that the resistance of the STO(Fe)/Nb:STO
interface locally changes during the switching process.},
keywords = {J (WoSType)},
cin = {IFF-6 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)VDB786 / $I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000264774000203},
doi = {10.1063/1.3100209},
url = {https://juser.fz-juelich.de/record/3983},
}