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024 7 _ |a 10.1063/1.3100209
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024 7 _ |a 2128/17262
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037 _ _ |a PreJuSER-3983
041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Menke, T.
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245 _ _ |a Separation of bulk and interface contributions to electroforming and resistive switching behavior of epitaxial Fe-doped SrTiO3
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2009
300 _ _ |a 066104
336 7 _ |a Journal Article
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|y 6
|v 105
500 _ _ |a We thank R. Muenstermann and K. Shibuya for helpful discussions and Intel Inc. for financial support.
520 _ _ |a We succeeded in the separation of bulk and interface contributions to the electroforming and resistive switching behavior of Pt/STO(Fe)/Nb:STO devices by performing impedance spectroscopy. Two distinctive features observed in the impedance spectra could be assigned to the STO(Fe) bulk and to the depletion layer of the Pt/STO(Fe) Schottky contact. We attribute the resistance change during the dc forming process to a local bypassing of the depletion layer caused by oxygen effusion to the environment. By comparing the impedance spectra in the resistive "on" and "off" states, we propose that the resistance of the STO(Fe)/Nb:STO interface locally changes during the switching process.
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653 2 0 |2 Author
|a effusion
653 2 0 |2 Author
|a electric impedance
653 2 0 |2 Author
|a electroforming
653 2 0 |2 Author
|a iron
653 2 0 |2 Author
|a niobium
653 2 0 |2 Author
|a platinum
653 2 0 |2 Author
|a Schottky barriers
653 2 0 |2 Author
|a strontium compounds
653 2 0 |2 Author
|a switching
700 1 _ |a Meuffels, P.
|b 1
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700 1 _ |a Dittmann, R.
|b 2
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700 1 _ |a Szot, K.
|b 3
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700 1 _ |a Waser, R.
|b 4
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773 _ _ |a 10.1063/1.3100209
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|0 PERI:(DE-600)1476463-5
|t Journal of applied physics
|v 105
|y 2009
|x 0021-8979
856 7 _ |u http://dx.doi.org/10.1063/1.3100209
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920 1 _ |d 31.12.2010
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