Home > Publications database > Elemental steps in the growth of thin beta-Ga2O3 films on CoGa(100) > print

001     39872
005     20180210141400.0
024 7 _ |a 0039-6028
|2 ISSN
037 _ _ |a PreJuSER-39872
082 _ _ |a 540
100 1 _ |a Franchy, R.
|0 P:(DE-Juel1)VDB5400
|b 0
|u FZJ
245 _ _ |a Elemental steps in the growth of thin beta-Ga2O3 films on CoGa(100)
260 _ _ |a Amsterdam
|b Elsevier
|c 2001
300 _ _ |a 337
336 7 _ |a Journal Article
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|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 470
500 _ _ |a Record converted from VDB: 12.11.2012
536 _ _ |a Grenzflächenaspekte der Informationstechnik
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700 1 _ |a Eumann, A. C.
|0 P:(DE-Juel1)VDB5708
|b 1
|u FZJ
700 1 _ |a Schmitz, G.
|0 P:(DE-Juel1)VDB5709
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|u FZJ
773 _ _ |g Vol. 470, p. 337
|p 337
|q 470<337
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 470
|y 2001
|x 0039-6028
909 C O |o oai:juser.fz-juelich.de:39872
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913 1 _ |k 29.35.0
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914 1 _ |y 2001
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
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970 _ _ |a VDB:(DE-Juel1)5295
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980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106

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