%0 Journal Article
%A Girgis, E.
%A Boeve, H.
%A de Boeck, J.
%A Schelten, J.
%A Rottländer, P.
%A Kohlstedt, H.
%A Grünberg, P. A.
%T Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method
%J Journal of magnetism and magnetic materials
%V 222
%@ 0304-8853
%C Amsterdam
%I North-Holland Publ. Co.
%M PreJuSER-39902
%P 133
%D 2001
%Z Record converted from VDB: 12.11.2012
%X Future magnetoresistive random access memories will require a vast matrix of reliable magnetic tunnel junctions. Therefore, the time-dependent dielectric breakdown of lithographically defined Co/Al2O3/Ni80Fe20 tunnel junctions, oxidized using an ultraviolet light-assisted oxidation process in O-2, was investigated by means of voltage ramp experiments on a series of patterned junctions with different area. As the applied voltage approaches 2 V, almost immediate breakdown of the junction is observed. This leads to an irreversible decrease of the junction resistance by more than 90%, For smaller tunnel junctions, a larger breakdown voltage was measured which confirms the statistical origin of the breakdown phenomenon. (C) 2000 Elsevier Science B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000166116600020
%R 10.1016/S0304-8853(00)00359-0
%U https://juser.fz-juelich.de/record/39902