TY  - JOUR
AU  - Girgis, E.
AU  - Boeve, H.
AU  - de Boeck, J.
AU  - Schelten, J.
AU  - Rottländer, P.
AU  - Kohlstedt, H.
AU  - Grünberg, P. A.
TI  - Dielectric breakdown of lithographically patterned tunnel junctions prepared by UV oxidation method
JO  - Journal of magnetism and magnetic materials
VL  - 222
SN  - 0304-8853
CY  - Amsterdam
PB  - North-Holland Publ. Co.
M1  - PreJuSER-39902
SP  - 133
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
AB  - Future magnetoresistive random access memories will require a vast matrix of reliable magnetic tunnel junctions. Therefore, the time-dependent dielectric breakdown of lithographically defined Co/Al2O3/Ni80Fe20 tunnel junctions, oxidized using an ultraviolet light-assisted oxidation process in O-2, was investigated by means of voltage ramp experiments on a series of patterned junctions with different area. As the applied voltage approaches 2 V, almost immediate breakdown of the junction is observed. This leads to an irreversible decrease of the junction resistance by more than 90%, For smaller tunnel junctions, a larger breakdown voltage was measured which confirms the statistical origin of the breakdown phenomenon. (C) 2000 Elsevier Science B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000166116600020
DO  - DOI:10.1016/S0304-8853(00)00359-0
UR  - https://juser.fz-juelich.de/record/39902
ER  -