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@ARTICLE{Pan:40328,
      author       = {Pan, F. M. and Pflitsch, C. and David, R. and Verheij, L.
                      K. and Franchy, R.},
      title        = {{F}ormation of an ordered oxide on the {C}o{G}a(100)
                      surface by room temperature oxidation and annealing},
      journal      = {Surface science},
      volume       = {479},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-40328},
      pages        = {191},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The preparation of an ordered GaO3 oxide on the GoGa(1 0 0)
                      surface by exposing the surface to oxygen at room
                      temperature and subsequent annealing has been studied by
                      thermal energy helium atom scattering and Auger electron
                      spectroscopy. During room temperature oxidation a disordered
                      Ga2O3 layer forms. The oxidation process is studied with lie
                      scattering and the results are compared with previously
                      reported scanning tunneling microscopy investigations. Upon
                      annealing, it is found that ordering of the oxide layer
                      proceeds very slowly. Even at a temperature of 800 K, 50 K
                      below the temperature at which the oxide decomposes and
                      disappears from the surface, the ordering process is not yet
                      completed after 1000 s. It is concluded that a smooth oxide
                      film can be prepared by room temperature exposure to oxygen
                      and annealing at temperatures just below decomposition
                      temperature of the oxide (850 K) which is very uniform with
                      respect to thickness. However, the amount of oxygen
                      adsorbing at 300 K is not sufficient to produce a continuous
                      film. About $10-15\%$ of the surface is not covered by the
                      oxide after this preparation method. To prepare a continuous
                      oxide layer several cycles of room temperature oxidation and
                      annealing seem necessary. (C) 2001 Elsevier Science B.V. All
                      rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Grenzflächenaspekte der Informationstechnik},
      pid          = {G:(DE-Juel1)FUEK61},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000168926100019},
      doi          = {10.1016/S0039-6028(01)00977-3},
      url          = {https://juser.fz-juelich.de/record/40328},
}