%0 Journal Article
%A Pan, F. M.
%A Verheij, L. K.
%A David, R.
%A Franchy, R.
%T Temperature dependence of the growth of gallium oxide on CoGa(100)
%J Thin solid films
%V 400
%@ 0040-6090
%C Amsterdam [u.a.]
%I Elsevier
%M PreJuSER-40333
%P 22
%D 2001
%Z Record converted from VDB: 12.11.2012
%X The oxidation of a CoGa(100) surface at high temperatures has been studied by scanning tunnelling microscopy (STM) and auger electron spectroscopy (AES). When CoGa(100) is oxidised at a sufficiently high temperature (> 600 K), an ordered Ga2O3 film is formed. The stability of the film depends on the sample temperature and partial oxygen pressure of the ambient gas. At negligible oxygen pressure (< 10(-11) mbar) the oxide is stable up to 850 K. At an oxygen pressure of 10(-6) mbar the oxide is stable up to 930 K and some of the oxide remains present up to 970 K. The oxide film is found to be very uniform. The thickness of the film is constant and independent of the oxidation temperature (600 K <T < 930 K), oxygen pressure (< 10(-6) mbar), and exposure (10(-4)-10(-2) mbar.s approximate to 10(2)-10(4) L). We find a clear improvement of the order of the oxide film surface with increasing oxidation temperature. In STM images, a domain structure of the oxide film is observed, The size of the domains increases by a factor of 5-10 when the oxidation temperature is increased from 700 to 900 K. (C) 2001 Elsevier Science B.V All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000172950800005
%R 10.1016/S0040-6090(01)01487-0
%U https://juser.fz-juelich.de/record/40333