000040333 001__ 40333
000040333 005__ 20180210124844.0
000040333 0247_ $$2DOI$$a10.1016/S0040-6090(01)01487-0
000040333 0247_ $$2WOS$$aWOS:000172950800005
000040333 037__ $$aPreJuSER-40333
000040333 041__ $$aeng
000040333 082__ $$a070
000040333 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000040333 084__ $$2WoS$$aMaterials Science, Coatings & Films
000040333 084__ $$2WoS$$aPhysics, Applied
000040333 084__ $$2WoS$$aPhysics, Condensed Matter
000040333 1001_ $$0P:(DE-Juel1)VDB5555$$aPan, F. M.$$b0$$uFZJ
000040333 245__ $$aTemperature dependence of the growth of gallium oxide on CoGa(100)
000040333 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2001
000040333 300__ $$a22
000040333 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000040333 3367_ $$2DataCite$$aOutput Types/Journal article
000040333 3367_ $$00$$2EndNote$$aJournal Article
000040333 3367_ $$2BibTeX$$aARTICLE
000040333 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000040333 3367_ $$2DRIVER$$aarticle
000040333 440_0 $$05762$$aThin Solid Films$$v400$$x0040-6090
000040333 500__ $$aRecord converted from VDB: 12.11.2012
000040333 520__ $$aThe oxidation of a CoGa(100) surface at high temperatures has been studied by scanning tunnelling microscopy (STM) and auger electron spectroscopy (AES). When CoGa(100) is oxidised at a sufficiently high temperature (> 600 K), an ordered Ga2O3 film is formed. The stability of the film depends on the sample temperature and partial oxygen pressure of the ambient gas. At negligible oxygen pressure (< 10(-11) mbar) the oxide is stable up to 850 K. At an oxygen pressure of 10(-6) mbar the oxide is stable up to 930 K and some of the oxide remains present up to 970 K. The oxide film is found to be very uniform. The thickness of the film is constant and independent of the oxidation temperature (600 K <T < 930 K), oxygen pressure (< 10(-6) mbar), and exposure (10(-4)-10(-2) mbar.s approximate to 10(2)-10(4) L). We find a clear improvement of the order of the oxide film surface with increasing oxidation temperature. In STM images, a domain structure of the oxide film is observed, The size of the domains increases by a factor of 5-10 when the oxidation temperature is increased from 700 to 900 K. (C) 2001 Elsevier Science B.V All rights reserved.
000040333 536__ $$0G:(DE-Juel1)FUEK61$$2G:(DE-HGF)$$aGrenzflächenaspekte der Informationstechnik$$c29.35.0$$x0
000040333 588__ $$aDataset connected to Web of Science
000040333 650_7 $$2WoSType$$aJ
000040333 65320 $$2Author$$aoxidation
000040333 65320 $$2Author$$aadsorption
000040333 65320 $$2Author$$adesorption
000040333 65320 $$2Author$$ascanning tunnelling microscopy (STM)
000040333 7001_ $$0P:(DE-Juel1)VDB5574$$aVerheij, L. K.$$b1$$uFZJ
000040333 7001_ $$0P:(DE-Juel1)VDB5790$$aDavid, R.$$b2$$uFZJ
000040333 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b3$$uFZJ
000040333 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/S0040-6090(01)01487-0$$gVol. 400, p. 22$$p22$$q400<22$$tThin solid films$$v400$$x0040-6090$$y2001
000040333 909CO $$ooai:juser.fz-juelich.de:40333$$pVDB
000040333 9131_ $$0G:(DE-Juel1)FUEK61$$bInformationstechnik$$k29.35.0$$lGrundlagenforschung zur Informationstechnik$$vGrenzflächenaspekte der Informationstechnik$$x0
000040333 9141_ $$y2001
000040333 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000040333 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000040333 970__ $$aVDB:(DE-Juel1)5380
000040333 980__ $$aVDB
000040333 980__ $$aConvertedRecord
000040333 980__ $$ajournal
000040333 980__ $$aI:(DE-Juel1)PGI-3-20110106
000040333 980__ $$aUNRESTRICTED
000040333 981__ $$aI:(DE-Juel1)PGI-3-20110106