% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Pan:40333,
      author       = {Pan, F. M. and Verheij, L. K. and David, R. and Franchy,
                      R.},
      title        = {{T}emperature dependence of the growth of gallium oxide on
                      {C}o{G}a(100)},
      journal      = {Thin solid films},
      volume       = {400},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-40333},
      pages        = {22},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The oxidation of a CoGa(100) surface at high temperatures
                      has been studied by scanning tunnelling microscopy (STM) and
                      auger electron spectroscopy (AES). When CoGa(100) is
                      oxidised at a sufficiently high temperature (> 600 K), an
                      ordered Ga2O3 film is formed. The stability of the film
                      depends on the sample temperature and partial oxygen
                      pressure of the ambient gas. At negligible oxygen pressure
                      (< 10(-11) mbar) the oxide is stable up to 850 K. At an
                      oxygen pressure of 10(-6) mbar the oxide is stable up to 930
                      K and some of the oxide remains present up to 970 K. The
                      oxide film is found to be very uniform. The thickness of the
                      film is constant and independent of the oxidation
                      temperature (600 K <T < 930 K), oxygen pressure (< 10(-6)
                      mbar), and exposure (10(-4)-10(-2) mbar.s approximate to
                      10(2)-10(4) L). We find a clear improvement of the order of
                      the oxide film surface with increasing oxidation
                      temperature. In STM images, a domain structure of the oxide
                      film is observed, The size of the domains increases by a
                      factor of 5-10 when the oxidation temperature is increased
                      from 700 to 900 K. (C) 2001 Elsevier Science B.V All rights
                      reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {070},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Grenzflächenaspekte der Informationstechnik},
      pid          = {G:(DE-Juel1)FUEK61},
      shelfmark    = {Materials Science, Multidisciplinary / Materials Science,
                      Coatings $\&$ Films / Physics, Applied / Physics, Condensed
                      Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000172950800005},
      doi          = {10.1016/S0040-6090(01)01487-0},
      url          = {https://juser.fz-juelich.de/record/40333},
}