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| Hauptseite > Publikationsdatenbank > Temperature dependence of the growth of gallium oxide on CoGa(100) > print |
| Hauptseite > Publikationsdatenbank > Temperature dependence of the growth of gallium oxide on CoGa(100) > print |
| 001 | 40333 | ||
| 005 | 20180210124844.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0040-6090(01)01487-0 |
| 024 | 7 | _ | |2 WOS |a WOS:000172950800005 |
| 037 | _ | _ | |a PreJuSER-40333 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 070 |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Materials Science, Coatings & Films |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Pan, F. M. |0 P:(DE-Juel1)VDB5555 |b 0 |u FZJ |
| 245 | _ | _ | |a Temperature dependence of the growth of gallium oxide on CoGa(100) |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2001 |
| 300 | _ | _ | |a 22 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Thin Solid Films |x 0040-6090 |0 5762 |v 400 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The oxidation of a CoGa(100) surface at high temperatures has been studied by scanning tunnelling microscopy (STM) and auger electron spectroscopy (AES). When CoGa(100) is oxidised at a sufficiently high temperature (> 600 K), an ordered Ga2O3 film is formed. The stability of the film depends on the sample temperature and partial oxygen pressure of the ambient gas. At negligible oxygen pressure (< 10(-11) mbar) the oxide is stable up to 850 K. At an oxygen pressure of 10(-6) mbar the oxide is stable up to 930 K and some of the oxide remains present up to 970 K. The oxide film is found to be very uniform. The thickness of the film is constant and independent of the oxidation temperature (600 K |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a oxidation |
| 653 | 2 | 0 | |2 Author |a adsorption |
| 653 | 2 | 0 | |2 Author |a desorption |
| 653 | 2 | 0 | |2 Author |a scanning tunnelling microscopy (STM) |
| 700 | 1 | _ | |a Verheij, L. K. |0 P:(DE-Juel1)VDB5574 |b 1 |u FZJ |
| 700 | 1 | _ | |a David, R. |0 P:(DE-Juel1)VDB5790 |b 2 |u FZJ |
| 700 | 1 | _ | |a Franchy, R. |0 P:(DE-Juel1)VDB5400 |b 3 |u FZJ |
| 773 | _ | _ | |a 10.1016/S0040-6090(01)01487-0 |g Vol. 400, p. 22 |p 22 |q 400<22 |0 PERI:(DE-600)1482896-0 |t Thin solid films |v 400 |y 2001 |x 0040-6090 |
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| 914 | 1 | _ | |y 2001 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k ISG-3 |l Institut für Grenzflächen und Vakuumtechnologien |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB43 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)5380 |
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| 980 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-3-20110106 |
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