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@ARTICLE{Rose:40408,
      author       = {Rose, V. and Ibach, H. and Podgursky, V. and Costina, I.
                      and Franchy, R.},
      title        = {{H}igh temperature oxidation of {C}o{A}l(100)},
      journal      = {Surface science},
      volume       = {577},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-40408},
      pages        = {139 - 150},
      year         = {2005},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We have employed Auger electron spectroscopy (AES), high
                      resolution electron energy loss spectroscopy (EELS), low
                      energy electron diffraction (LEED) and scanning tunneling
                      microscopy (STM) to investigate the growth of an Al2O3 film
                      on CoAl(1 0 0). While exposure to oxygen at room temperature
                      leads to the formation of amorphous alumina, subsequent
                      annealing at higher temperatures results in the growth of
                      well-ordered theta-Al2O3. Well-ordered Al2O3 films are also
                      formed by oxidation at temperatures of 800 K and above. The
                      oxide is characterized by Fuchs-Kliewer modes at around 430,
                      630, 780 and 920 cm(-1). Oxide islands grow in two sets of
                      domains perpendicular to each other. Under ultra-high vacuum
                      conditions, self-limiting thickness of the oxide layer (9-10
                      Angstrom) has been found. The band gap of the theta-Al2O3
                      film on CoAl(1 0 0) is 4.3-4.5 eV. (C) 2005 Elsevier B.V.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3 / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43 / I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000227530600007},
      doi          = {10.1016/j.susc.2004.12.028},
      url          = {https://juser.fz-juelich.de/record/40408},
}