001     40408
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024 7 _ |2 DOI
|a 10.1016/j.susc.2004.12.028
024 7 _ |2 WOS
|a WOS:000227530600007
037 _ _ |a PreJuSER-40408
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Chemistry, Physical
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Rose, V.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB14465
245 _ _ |a High temperature oxidation of CoAl(100)
260 _ _ |a Amsterdam
|b Elsevier
|c 2005
300 _ _ |a 139 - 150
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
|2 DRIVER
440 _ 0 |a Surface Science
|x 0039-6028
|0 5673
|v 577
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a We have employed Auger electron spectroscopy (AES), high resolution electron energy loss spectroscopy (EELS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM) to investigate the growth of an Al2O3 film on CoAl(1 0 0). While exposure to oxygen at room temperature leads to the formation of amorphous alumina, subsequent annealing at higher temperatures results in the growth of well-ordered theta-Al2O3. Well-ordered Al2O3 films are also formed by oxidation at temperatures of 800 K and above. The oxide is characterized by Fuchs-Kliewer modes at around 430, 630, 780 and 920 cm(-1). Oxide islands grow in two sets of domains perpendicular to each other. Under ultra-high vacuum conditions, self-limiting thickness of the oxide layer (9-10 Angstrom) has been found. The band gap of the theta-Al2O3 film on CoAl(1 0 0) is 4.3-4.5 eV. (C) 2005 Elsevier B.V. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
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588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
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653 2 0 |2 Author
|a AES
653 2 0 |2 Author
|a LEED
653 2 0 |2 Author
|a EELS
653 2 0 |2 Author
|a STM
653 2 0 |2 Author
|a oxidation
653 2 0 |2 Author
|a cobalt
653 2 0 |2 Author
|a aluminum
653 2 0 |2 Author
|a alumina
700 1 _ |a Ibach, H.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB5414
700 1 _ |a Podgursky, V.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB41356
700 1 _ |a Costina, I.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Franchy, R.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB5400
773 _ _ |a 10.1016/j.susc.2004.12.028
|g Vol. 577, p. 139 - 150
|p 139 - 150
|q 577<139 - 150
|0 PERI:(DE-600)1479030-0
|t Surface science
|v 577
|y 2005
|x 0039-6028
856 7 _ |u http://dx.doi.org/10.1016/j.susc.2004.12.028
909 C O |o oai:juser.fz-juelich.de:40408
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
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|x 0
914 1 _ |y 2005
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 1
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981 _ _ |a I:(DE-Juel1)PGI-3-20110106
981 _ _ |a I:(DE-Juel1)VDB381


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