000040427 001__ 40427
000040427 005__ 20180210132144.0
000040427 0247_ $$2DOI$$a10.1016/S0167-5729(01)00012-7
000040427 0247_ $$2WOS$$aWOS:000171678700001
000040427 037__ $$aPreJuSER-40427
000040427 041__ $$aeng
000040427 082__ $$a330
000040427 084__ $$2WoS$$aChemistry, Physical
000040427 084__ $$2WoS$$aPhysics, Condensed Matter
000040427 1001_ $$0P:(DE-Juel1)VDB5601$$aVoigtländer, B.$$b0$$uFZJ
000040427 245__ $$aFundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
000040427 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2001
000040427 300__ $$a127
000040427 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000040427 3367_ $$2DataCite$$aOutput Types/Journal article
000040427 3367_ $$00$$2EndNote$$aJournal Article
000040427 3367_ $$2BibTeX$$aARTICLE
000040427 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000040427 3367_ $$2DRIVER$$aarticle
000040427 440_0 $$05674$$aSurface Science Reports$$v43$$x0167-5729
000040427 500__ $$aRecord converted from VDB: 12.11.2012
000040427 520__ $$aExperimental results on the epitaxy of Si and Ge on Si(0 0 1) and Si(1 1 1) surfaces, which are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed. Techniques for simultaneous epitaxial growth and STM measurements at high temperature are described. The ability to access the evolution of the growth morphology during growth down to the atomic level enables the study of the influence of surface reconstruction on the growth. The relatively complete characterization of the growth process facilitates comparison to theoretical models and allows the identification of fundamental growth processes. For instance, the observed transition between different growth modes can be explained by specific growth processes included in a model. The influence of strain on the growth morphology is reviewed for the case of heteroepitaxial growth of Ge on Si. With the method of combining STM imaging and epitaxial growth, the transition from two-dimensional to three-dimensional growth as well as the evolution of size and shape of three-dimensional islands can be studied. (C) 2001 Elsevier Science B.V. All rights reserved.
000040427 536__ $$0G:(DE-Juel1)FUEK60$$2G:(DE-HGF)$$aStruktur und  Dynamik von Grenzflächen$$c29.25.0$$x0
000040427 588__ $$aDataset connected to Web of Science
000040427 650_7 $$2WoSType$$aJ
000040427 65320 $$2Author$$amolecular beam epitaxy
000040427 65320 $$2Author$$ascanning tunneling microscopy
000040427 65320 $$2Author$$aepitaxy
000040427 65320 $$2Author$$anucleation
000040427 65320 $$2Author$$aself-assembly
000040427 65320 $$2Author$$agermanium
000040427 65320 $$2Author$$asilicon
000040427 65320 $$2Author$$asemiconductor-semiconductor thin film structures
000040427 773__ $$0PERI:(DE-600)1479038-5$$a10.1016/S0167-5729(01)00012-7$$gVol. 43, p. 127$$p127$$q43<127$$tSurface science reports$$v43$$x0167-5729$$y2001
000040427 909CO $$ooai:juser.fz-juelich.de:40427$$pVDB
000040427 9131_ $$0G:(DE-Juel1)FUEK60$$bStruktur der Materie und Materialforschung$$k29.25.0$$lGrenzflächen- und Vakuumforschung$$vStruktur und  Dynamik von Grenzflächen$$x0
000040427 9141_ $$y2001
000040427 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000040427 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
000040427 970__ $$aVDB:(DE-Juel1)5420
000040427 980__ $$aVDB
000040427 980__ $$aConvertedRecord
000040427 980__ $$ajournal
000040427 980__ $$aI:(DE-Juel1)PGI-3-20110106
000040427 980__ $$aUNRESTRICTED
000040427 981__ $$aI:(DE-Juel1)PGI-3-20110106