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@ARTICLE{Voigtlnder:40427,
      author       = {Voigtländer, B.},
      title        = {{F}undamental processes in {S}i/{S}i and {G}e/{S}i epitaxy
                      studied by scanning tunneling microscopy during growth},
      journal      = {Surface science reports},
      volume       = {43},
      issn         = {0167-5729},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {PreJuSER-40427},
      pages        = {127},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Experimental results on the epitaxy of Si and Ge on Si(0 0
                      1) and Si(1 1 1) surfaces, which are obtained by scanning
                      tunneling microscopy (STM) imaging during growth, are
                      reviewed. Techniques for simultaneous epitaxial growth and
                      STM measurements at high temperature are described. The
                      ability to access the evolution of the growth morphology
                      during growth down to the atomic level enables the study of
                      the influence of surface reconstruction on the growth. The
                      relatively complete characterization of the growth process
                      facilitates comparison to theoretical models and allows the
                      identification of fundamental growth processes. For
                      instance, the observed transition between different growth
                      modes can be explained by specific growth processes included
                      in a model. The influence of strain on the growth morphology
                      is reviewed for the case of heteroepitaxial growth of Ge on
                      Si. With the method of combining STM imaging and epitaxial
                      growth, the transition from two-dimensional to
                      three-dimensional growth as well as the evolution of size
                      and shape of three-dimensional islands can be studied. (C)
                      2001 Elsevier Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {330},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Struktur und Dynamik von Grenzflächen},
      pid          = {G:(DE-Juel1)FUEK60},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000171678700001},
      doi          = {10.1016/S0167-5729(01)00012-7},
      url          = {https://juser.fz-juelich.de/record/40427},
}