% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Reichenberg:40435,
      author       = {Reichenberg, B. and Szot, K. and Schneller, T. and Breuer,
                      U. and Tiedke, S. and Waser, R.},
      title        = {{I}nhomogeneous {L}ocal {C}onductivity {I}nduced by
                      {T}hermal {R}eduction in {B}a{T}i{O}3 {T}hin {F}ilms and
                      {S}ingle {C}rystals},
      journal      = {Integrated ferroelectrics},
      volume       = {61},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-40435},
      pages        = {43 - 49},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The potential of perovskite type materials for
                      microelectronic applications depends on a detailed
                      understanding of their electrical properties, especially
                      their intrinsic charge transport mechanisms. This paper
                      focuses on the analysis of conducting mechanisms after a
                      thermal reduction process with a resolution in a nanoscale
                      regime. It is known that thermal reduction leads to a
                      decrease in the samples' resistivity. We show that this
                      decrease might be caused by an inhomogeneous distribution of
                      local conductivity paths. Further we investigated the
                      properties of these paths by secondary ion mass spectrometry
                      (SIMS) and atomic force microscopy (AFM) to find the
                      mechanism which leads to this phenomenon. Furthermore, we
                      show that the occurrence of local current paths can be
                      partially reversed by an re-oxidation process at elevated
                      temperatures.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / ZCH / CNI},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)ZCH-20090406 /
                      I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000222470500006},
      doi          = {10.1080/10584580490458865},
      url          = {https://juser.fz-juelich.de/record/40435},
}