Hauptseite > Publikationsdatenbank > Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals > print

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024 7 _ |2 DOI
|a 10.1080/10584580490458865
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037 _ _ |a PreJuSER-40435
041 _ _ |a eng
082 _ _ |a 620
084 _ _ |2 WoS
|a Engineering, Electrical & Electronic
084 _ _ |2 WoS
|a Physics, Applied
084 _ _ |2 WoS
|a Physics, Condensed Matter
100 1 _ |a Reichenberg, B.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2004
300 _ _ |a 43 - 49
336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a JOURNAL_ARTICLE
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336 7 _ |a article
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440 _ 0 |a Integrated Ferroelectrics
|x 1058-4587
|0 2659
|v 61
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a The potential of perovskite type materials for microelectronic applications depends on a detailed understanding of their electrical properties, especially their intrinsic charge transport mechanisms. This paper focuses on the analysis of conducting mechanisms after a thermal reduction process with a resolution in a nanoscale regime. It is known that thermal reduction leads to a decrease in the samples' resistivity. We show that this decrease might be caused by an inhomogeneous distribution of local conductivity paths. Further we investigated the properties of these paths by secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) to find the mechanism which leads to this phenomenon. Furthermore, we show that the occurrence of local current paths can be partially reversed by an re-oxidation process at elevated temperatures.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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588 _ _ |a Dataset connected to Web of Science
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653 2 0 |2 Author
|a barium titanate
653 2 0 |2 Author
|a conductivity
700 1 _ |a Szot, K.
|b 1
|u FZJ
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700 1 _ |a Schneller, T.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Breuer, U.
|b 3
|u FZJ
|0 P:(DE-Juel1)VDB2782
700 1 _ |a Tiedke, S.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 5
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1080/10584580490458865
|g Vol. 61, p. 43 - 49
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|0 PERI:(DE-600)2037916-X
|t Integrated ferroelectrics
|v 61
|y 2004
|x 1058-4587
856 7 _ |u http://dx.doi.org/10.1080/10584580490458865
909 C O |o oai:juser.fz-juelich.de:40435
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913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
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914 1 _ |y 2004
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
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|l Zentralabteilung für Chemische Analysen
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|l Center of Nanoelectronic Systems for Information Technology
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