Home > Publications database > Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals > print |
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024 | 7 | _ | |2 DOI |a 10.1080/10584580490458865 |
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084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
084 | _ | _ | |2 WoS |a Physics, Applied |
084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
100 | 1 | _ | |a Reichenberg, B. |b 0 |0 P:(DE-HGF)0 |
245 | _ | _ | |a Inhomogeneous Local Conductivity Induced by Thermal Reduction in BaTiO3 Thin Films and Single Crystals |
260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2004 |
300 | _ | _ | |a 43 - 49 |
336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 61 |
500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
520 | _ | _ | |a The potential of perovskite type materials for microelectronic applications depends on a detailed understanding of their electrical properties, especially their intrinsic charge transport mechanisms. This paper focuses on the analysis of conducting mechanisms after a thermal reduction process with a resolution in a nanoscale regime. It is known that thermal reduction leads to a decrease in the samples' resistivity. We show that this decrease might be caused by an inhomogeneous distribution of local conductivity paths. Further we investigated the properties of these paths by secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) to find the mechanism which leads to this phenomenon. Furthermore, we show that the occurrence of local current paths can be partially reversed by an re-oxidation process at elevated temperatures. |
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653 | 2 | 0 | |2 Author |a barium titanate |
653 | 2 | 0 | |2 Author |a conductivity |
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700 | 1 | _ | |a Schneller, T. |b 2 |0 P:(DE-HGF)0 |
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700 | 1 | _ | |a Tiedke, S. |b 4 |0 P:(DE-HGF)0 |
700 | 1 | _ | |a Waser, R. |b 5 |u FZJ |0 P:(DE-Juel1)131022 |
773 | _ | _ | |a 10.1080/10584580490458865 |g Vol. 61, p. 43 - 49 |p 43 - 49 |q 61<43 - 49 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 61 |y 2004 |x 1058-4587 |
856 | 7 | _ | |u http://dx.doi.org/10.1080/10584580490458865 |
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