TY  - CONF
AU  - Moers, J.
AU  - Trellenkamp, S.
AU  - Vescan, L.
AU  - Marso, M.
AU  - Kordos, P.
AU  - Lüth, H.
TI  - Vertical double-gate MOSFET based on epitaxial growth by LPCVD
M1  - PreJuSER-40697
SN  - 2-914601-01-8
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
LB  - PUB:(DE-HGF)8 ; PUB:(DE-HGF)7
UR  - https://juser.fz-juelich.de/record/40697
ER  -