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@INPROCEEDINGS{Moers:40697,
      author       = {Moers, J. and Trellenkamp, S. and Vescan, L. and Marso, M.
                      and Kordos, P. and Lüth, H.},
      title        = {{V}ertical double-gate {MOSFET} based on epitaxial growth
                      by {LPCVD}},
      reportid     = {PreJuSER-40697},
      isbn         = {2-914601-01-8},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      comment      = {Proceedings of the 31st European Solid-State Development
                      Research Conference / ed. H. Ryssel ... - 2001. -
                      2-914601-01-8. - S. 191},
      booktitle     = {Proceedings of the 31st European
                       Solid-State Development Research
                       Conference / ed. H. Ryssel ... - 2001.
                       - 2-914601-01-8. - S. 191},
      cin          = {ISG-1},
      cid          = {I:(DE-Juel1)VDB41},
      pnm          = {Halbleiterbauelemente und Analytik /
                      Halbleiterschichtsysteme und Mesoskopische Strukturen},
      pid          = {G:(DE-Juel1)FUEK68 / G:(DE-Juel1)FUEK69},
      typ          = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/40697},
}