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| Hauptseite > Publikationsdatenbank > Vertical double-gate MOSFET based on epitaxial growth by LPCVD > print |
| Hauptseite > Publikationsdatenbank > Vertical double-gate MOSFET based on epitaxial growth by LPCVD > print |
| 001 | 40697 | ||
| 005 | 20180210140039.0 | ||
| 020 | _ | _ | |a 2-914601-01-8 |
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| 100 | 1 | _ | |a Moers, J. |0 P:(DE-Juel1)VDB5547 |b 0 |u FZJ |
| 245 | _ | _ | |a Vertical double-gate MOSFET based on epitaxial growth by LPCVD |
| 260 | _ | _ | |c 2001 |
| 295 | 1 | 0 | |a Proceedings of the 31st European Solid-State Development Research Conference / ed. H. Ryssel ... - 2001. - 2-914601-01-8. - S. 191 |
| 336 | 7 | _ | |a Contribution to a conference proceedings |0 PUB:(DE-HGF)8 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Contribution to a book |0 PUB:(DE-HGF)7 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a CONFERENCE_PAPER |2 ORCID |
| 336 | 7 | _ | |a Output Types/Conference Paper |2 DataCite |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 500 | _ | _ | |3 Conference proceedings / Book |
| 536 | _ | _ | |a Halbleiterbauelemente und Analytik |c 29.88.0 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK68 |x 0 |
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| 700 | 1 | _ | |a Trellenkamp, S. |0 P:(DE-Juel1)128856 |b 1 |u FZJ |
| 700 | 1 | _ | |a Vescan, L. |0 P:(DE-Juel1)VDB5472 |b 2 |u FZJ |
| 700 | 1 | _ | |a Marso, M. |0 P:(DE-Juel1)VDB5422 |b 3 |u FZJ |
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| 700 | 1 | _ | |a Lüth, H. |0 P:(DE-Juel1)VDB975 |b 5 |u FZJ |
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| 914 | 1 | _ | |a Proceedings |y 2001 |
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