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@ARTICLE{Pchelyakov:40708,
      author       = {Pchelyakov, O. P. and Bolkhovityanov, Y. B. and
                      Dvurechenskii, A. V. and Sokolov, A. P. and Nikiforov, A. I.
                      and Yakimov, A. I. and Voigtländer, B.},
      title        = {{S}ilicon-germanium nanostructures with quantum dots :
                      formation mechanisms and electrical properties},
      journal      = {Semiconductors},
      volume       = {34},
      issn         = {1063-7826},
      address      = {Berlin},
      publisher    = {Springer Science + Business Media},
      reportid     = {PreJuSER-40708},
      pages        = {1229},
      year         = {2000},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The generally accepted notions about the formation
                      mechanisms for germanium islands with nanometer-scale sizes
                      in a Ge-on-Si system are reviewed on the basis of analysis
                      of recent publications. The presence of elastic strains in
                      the epilayers and in the three-dimensional Ge islands on Si
                      is a key factor that not only initiates a morphological
                      transition from a planar film to an island-containing film
                      (the Stranski-Krastanov mechanism) but also influences the
                      subsequent stages of the islands' evolution, including their
                      shape, size, and spatial distribution. In many cases, this
                      factor modifies appreciably the classical mechanisms of
                      phase-formation and their sequence up to the
                      quasi-equilibrium coexistence of three-dimensional Ge
                      nanoislands at the surface of the Si substrate. The methods
                      for improving the degree of the ordering of nanoislands to
                      attain the smallest possible sizes and large density of
                      areal distribution of these islands are discussed. The
                      published data on optical absorption in the multilayered
                      Ge-Si systems with quantum dots are considered; these data
                      are indicative of an anomalously large cross section of
                      intraband absorption, which makes this class of
                      nanostructures promising for the development of
                      photodetectors of the infrared region of the spectrum. The
                      results of original studies of electrical and optical
                      properties of heterostructures that involve Ge quantum dots
                      and are synthesized by molecular-beam epitaxy on the Si
                      substrates are reported. (C) 2000 MAIK "Nauka/
                      Interperiodica".},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Struktur und Dynamik von Grenzflächen},
      pid          = {G:(DE-Juel1)FUEK60},
      shelfmark    = {Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000090017000001},
      url          = {https://juser.fz-juelich.de/record/40708},
}